Abstract
The characterization of impact-ionization (II) and stress-induced damage in 28-nm bulk n-channel MOSFETs is used to identify the mechanisms for carrier-induced interface trap generation (ITG) from 300 K to 77 K. The energy-driven paradigm of hot carrier effects is used to study carrier-induced ITG and its temperature dependence, and to analyze the influence of electron-electron scattering (EES) on carrier-induced degradation of ultra-short channel devices. The analysis clearly illustrates the significant role of EES in the hot (i.e., high-energy) carriers single particle mechanism of ITG, as well as its contribution to the cold (i.e., low-energy) carriers multiple particle mechanism of ITG. This is evidenced through extractions of ITG lifetime as a function of temperature and stress current from measurements of 28 nm n-channel devices. We apply a simple model to discuss the impact of EES on the experimentally observed trends for II and ITG rates.
| Original language | English (US) |
|---|---|
| Article number | 8434255 |
| Pages (from-to) | 456-462 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 18 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 2018 |
Keywords
- CMOS
- Hot-carriers
- aging effects
- cryogenic
- impact ionization
- interface traps
- low temperature
- reliability
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering