Impact ionization and high-field effects in wide-band-gap semiconductors

M. Reigrotzki, J. R. Madureira, A. Kuligk, N. Fitzer, R. Redmer, Stephen Goodnick, M. Dür, W. Schattke

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Impact ionization is important for electron transport in wide-band-gap semiconductors at high electric fields. We consider a realistic band structure as well as high-field quantum corrections such as the intracollisional field effect in the calculation of the microscopic scattering rate. A pronounced softening of the impact ionization threshold is obtained. This field-dependent impact ionization rate is included within a full-band ensemble Monte Carlo simulation of high-field transport in ZnS. Although the impact ionization rate itself is strongly affected, little effect is observed on measurable quantities such as the impact ionization coefficient.

Original languageEnglish (US)
Pages (from-to)52-54
Number of pages3
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

Keywords

  • High-field transport
  • Impact ionization
  • Intracollisional field effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Reigrotzki, M., Madureira, J. R., Kuligk, A., Fitzer, N., Redmer, R., Goodnick, S., Dür, M., & Schattke, W. (2002). Impact ionization and high-field effects in wide-band-gap semiconductors. Physica B: Condensed Matter, 314(1-4), 52-54. https://doi.org/10.1016/S0921-4526(01)01381-3