Imaging periodic scarred states in InAs open quantum dots: Evidence of quantum Darwinism

A. M. Burke, R. Akis, T. E. Day, G. Speyer, B. R. Bennett, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Scanning gate microscopy (SGM) is used to image scar structures in an InAs open quantum dot, which is defined via electron beam lithography and wet etching. Periodicities in magnetic field are found within the scanned images and correlate to those observed in the conductance fluctuations. Simulations have shown that these magnetic transform images show striking resemblance to actual scars found in the dot that replicate through the conductance modes in direct agreement with the theory of quantum Darwinism.

Original languageEnglish (US)
Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages103-104
Number of pages2
DOIs
StatePublished - Dec 1 2010
Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
Duration: Dec 12 2010Dec 15 2010

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
CountryAustralia
CityCanberra, ACT
Period12/12/1012/15/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Burke, A. M., Akis, R., Day, T. E., Speyer, G., Bennett, B. R., & Ferry, D. K. (2010). Imaging periodic scarred states in InAs open quantum dots: Evidence of quantum Darwinism. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 103-104). [5699681] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699681