Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopy

Fernando A. Ponce, Julio Aranovich

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The silicon-sapphire interface of CVD silicon on a (11̄02) sapphire substrate has been studied by high-resolution transmission electron microscopy. Cross-section images of the interface are presented where the silicon and sapphire lattices are directly resolved. The images show that the interface is planar and abrupt to the limit of resolution (less than 3 Å). Defect anisotropy is evident and can be linked to tilt of the [100] direction of the silicon layer with respect to the normal to the substrate.

Original languageEnglish (US)
Pages (from-to)439-441
Number of pages3
JournalApplied Physics Letters
Volume38
Issue number6
DOIs
StatePublished - 1981
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopy'. Together they form a unique fingerprint.

Cite this