Imaging of the electric fields and charge associated with modulation-doped 4H/3C/4H polytypic quantum wells in SiC

M. K. Mikhov, G. Samson, Brian Skromme, R. Wang, C. Li, I. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polytypic 3C quantum wells (double Shockley stacking faults) are spontaneously generated during thermal processing of moderately doped 4H-SiC epilayers grown on substrates with heavy n-type doping above ∼3×1019 cm-3. They intersect the wafer surface as straight lines, due to the 8° misorientation of the wafer from the c-axis. We describe observations of electric fields and charge associated with these intersections using electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM). The results are compared to two-dimensional electrostatic simulations.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages937-938
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

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    Mikhov, M. K., Samson, G., Skromme, B., Wang, R., Li, C., & Bhat, I. (2005). Imaging of the electric fields and charge associated with modulation-doped 4H/3C/4H polytypic quantum wells in SiC. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 937-938). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994416