Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

High resolution transmission electron microscopy can play a fundamental role in the understanding of heterojunction interfaces. Recently, this technique has been applied to the study of semiconductor materials. Results regarding interface epitaxial relationships for a varied number of systems are presented. The experimental methods and limitations of the technique are discussed.

Original languageEnglish (US)
Pages (from-to)215-219
Number of pages5
JournalUltramicroscopy
Volume9
Issue number3
DOIs
StatePublished - 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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