Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy

Fernando A. Ponce

doi:10.1016/0304-3991(82)90202-9

Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy

Fernando A. Ponce

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

High resolution transmission electron microscopy can play a fundamental role in the understanding of heterojunction interfaces. Recently, this technique has been applied to the study of semiconductor materials. Results regarding interface epitaxial relationships for a varied number of systems are presented. The experimental methods and limitations of the technique are discussed.

Original language	English (US)
Pages (from-to)	215-219
Number of pages	5
Journal	Ultramicroscopy
Volume	9
Issue number	3
DOIs	https://doi.org/10.1016/0304-3991(82)90202-9
State	Published - 1982
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(82)90202-9

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title = "Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy",

abstract = "High resolution transmission electron microscopy can play a fundamental role in the understanding of heterojunction interfaces. Recently, this technique has been applied to the study of semiconductor materials. Results regarding interface epitaxial relationships for a varied number of systems are presented. The experimental methods and limitations of the technique are discussed.",

author = "Ponce, {Fernando A.}",

year = "1982",

doi = "10.1016/0304-3991(82)90202-9",

language = "English (US)",

volume = "9",

pages = "215--219",

journal = "Ultramicroscopy",

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T1 - Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy

AU - Ponce, Fernando A.

PY - 1982

Y1 - 1982

N2 - High resolution transmission electron microscopy can play a fundamental role in the understanding of heterojunction interfaces. Recently, this technique has been applied to the study of semiconductor materials. Results regarding interface epitaxial relationships for a varied number of systems are presented. The experimental methods and limitations of the technique are discussed.

AB - High resolution transmission electron microscopy can play a fundamental role in the understanding of heterojunction interfaces. Recently, this technique has been applied to the study of semiconductor materials. Results regarding interface epitaxial relationships for a varied number of systems are presented. The experimental methods and limitations of the technique are discussed.

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U2 - 10.1016/0304-3991(82)90202-9

DO - 10.1016/0304-3991(82)90202-9

M3 - Article

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JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 3

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Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy

Abstract

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