Abstract
The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1488-1491 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 26 |
| Issue number | 4 |
| DOIs | |
| State | Published - Aug 25 2008 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Burke, A. M., Aoki, N., Akis, R., Ochiai, Y., & Ferry, D. K. (2008). Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(4), 1488-1491. https://doi.org/10.1116/1.2958239