Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

A. M. Burke, N. Aoki, R. Akis, Y. Ochiai, D. K. Ferry

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

Original languageEnglish (US)
Pages (from-to)1488-1491
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number4
DOIs
StatePublished - Aug 25 2008

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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