Abstract
The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.
Original language | English (US) |
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Pages (from-to) | 1488-1491 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 26 |
Issue number | 4 |
DOIs | |
State | Published - 2008 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering