Abstract
The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1488-1491 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 26 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2008 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy. / Burke, A. M.; Aoki, N.; Akis, R.; Ochiai, Y.; Ferry, D. K.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 4, 2008, p. 1488-1491.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy
AU - Burke, A. M.
AU - Aoki, N.
AU - Akis, R.
AU - Ochiai, Y.
AU - Ferry, D. K.
PY - 2008
Y1 - 2008
N2 - The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.
AB - The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.
UR - http://www.scopus.com/inward/record.url?scp=49749146771&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=49749146771&partnerID=8YFLogxK
U2 - 10.1116/1.2958239
DO - 10.1116/1.2958239
M3 - Article
AN - SCOPUS:49749146771
VL - 26
SP - 1488
EP - 1491
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
ER -