Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

A. M. Burke; N. Aoki; R. Akis; Y. Ochiai; D. K. Ferry

doi:10.1116/1.2958239

Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

A. M. Burke, N. Aoki, R. Akis, Y. Ochiai, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

Original language	English (US)
Pages (from-to)	1488-1491
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	4
DOIs	https://doi.org/10.1116/1.2958239
State	Published - 2008

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.",

author = "Burke, {A. M.} and N. Aoki and R. Akis and Y. Ochiai and Ferry, {D. K.}",

note = "Funding Information: A.M.B. was supported by an Applied Materials doctoral fellowship. The authors would like to acknowledge helpful discussions with S. M. Goodnick, C. Tracy, L. R. Cooper, and T. E. Day. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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T1 - Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

AU - Burke, A. M.

AU - Aoki, N.

AU - Akis, R.

AU - Ochiai, Y.

AU - Ferry, D. K.

N1 - Funding Information: A.M.B. was supported by an Applied Materials doctoral fellowship. The authors would like to acknowledge helpful discussions with S. M. Goodnick, C. Tracy, L. R. Cooper, and T. E. Day. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

AB - The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

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Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

Abstract

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