Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

A. M. Burke, N. Aoki, R. Akis, Y. Ochiai, D. K. Ferry

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

Original languageEnglish (US)
Pages (from-to)1488-1491
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number4
DOIs
StatePublished - 2008

Fingerprint

Semiconductor quantum dots
Microscopic examination
quantum dots
microscopy
Scanning
Imaging techniques
Two dimensional electron gas
scanning
Electron beam lithography
Wet etching
aluminum gallium arsenides
electron gas
lithography
etching
electron beams
Geometry
geometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy. / Burke, A. M.; Aoki, N.; Akis, R.; Ochiai, Y.; Ferry, D. K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 4, 2008, p. 1488-1491.

Research output: Contribution to journalArticle

@article{cf4a186428c4443fb870b28175691204,
title = "Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy",
abstract = "The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.",
author = "Burke, {A. M.} and N. Aoki and R. Akis and Y. Ochiai and Ferry, {D. K.}",
year = "2008",
doi = "10.1116/1.2958239",
language = "English (US)",
volume = "26",
pages = "1488--1491",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

AU - Burke, A. M.

AU - Aoki, N.

AU - Akis, R.

AU - Ochiai, Y.

AU - Ferry, D. K.

PY - 2008

Y1 - 2008

N2 - The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

AB - The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar dot. The dot was fabricated in GaAs/AlGaAs. Electron beam lithography and wet etching were used to isolate the two dimensional electron gas and form the device geometry. The SGM image was then high-pass filtered to show both classical and quantum behavior and similarities to a calculated structure are suggested.

UR - http://www.scopus.com/inward/record.url?scp=49749146771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49749146771&partnerID=8YFLogxK

U2 - 10.1116/1.2958239

DO - 10.1116/1.2958239

M3 - Article

AN - SCOPUS:49749146771

VL - 26

SP - 1488

EP - 1491

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -