IIIA-3 Modulation-Doped Field-Effect Transistors and Logic Gates Based on Two-Dimensional Hole Gas

Richard Kiehl, H. L. Stormer, K. Baldwin, A. C. Gossard, W. Wingmann

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)1968
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume31
Issue number12
DOIs
StatePublished - 1984
Externally publishedYes

Fingerprint

Gates (transistor)
Logic gates
High electron mobility transistors
Gases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

IIIA-3 Modulation-Doped Field-Effect Transistors and Logic Gates Based on Two-Dimensional Hole Gas. / Kiehl, Richard; Stormer, H. L.; Baldwin, K.; Gossard, A. C.; Wingmann, W.

In: IEEE Transactions on Electron Devices, Vol. 31, No. 12, 1984, p. 1968.

Research output: Contribution to journalArticle

Kiehl, Richard ; Stormer, H. L. ; Baldwin, K. ; Gossard, A. C. ; Wingmann, W. / IIIA-3 Modulation-Doped Field-Effect Transistors and Logic Gates Based on Two-Dimensional Hole Gas. In: IEEE Transactions on Electron Devices. 1984 ; Vol. 31, No. 12. pp. 1968.
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