IIIA-3 Modulation-Doped Field-Effect Transistors and Logic Gates Based on Two-Dimensional Hole Gas

R. A. Kiehl, H. L. Stormer, K. Baldwin, A. C. Gossard, W. Wingmann

Research output: Contribution to journalArticle

2 Scopus citations
Original languageEnglish (US)
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume31
Issue number12
DOIs
StatePublished - Dec 1984
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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