III-nitride deep UV laser on sapphire substrate

Xiao Hang Li; Theeradetch Detchprohm; Russell D. Dupuis; Tsung Ting Kao; Shyh Chiang Shen; Md Mahbub Satter; P. Douglas Yoder; Shuo Wang; Yong O. Wei; Hongen Xie; Alec Fischer; Fernando Ponce; Tim Wernicke; Christof Reich; Martin Martens; Michael Kneissl

doi:10.1109/IPCon.2015.7323746

III-nitride deep UV laser on sapphire substrate

Xiao Hang Li, Theeradetch Detchprohm, Russell D. Dupuis, Tsung Ting Kao, Shyh Chiang Shen, Md Mahbub Satter, P. Douglas Yoder, Shuo Wang, Yong O. Wei, Hongen Xie, Alec Fischer, Fernando Ponce, Tim Wernicke, Christof Reich, Martin Martens, Michael Kneissl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Record-low threshold III-nitride deep UV lasers at a wavelength range of 239-256 nm are demonstrated on sapphire substrates, including the first laser on sapphire below 260 nm. This paper will discuss growth, fabrication and characterization of the lasers in detail as well as future direction.

Original language	English (US)
Title of host publication	2015 IEEE Photonics Conference, IPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	236-237
Number of pages	2
ISBN (Print)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323746
State	Published - Nov 9 2015
Event	IEEE Photonics Conference, IPC 2015 - Reston, United States Duration: Aug 30 2015 → Aug 31 2015

Other

Other	IEEE Photonics Conference, IPC 2015
Country/Territory	United States
City	Reston
Period	8/30/15 → 8/31/15

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/IPCon.2015.7323746

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Li, X. H., Detchprohm, T., Dupuis, R. D., Kao, T. T., Shen, S. C., Satter, M. M., Yoder, P. D., Wang, S., Wei, Y. O., Xie, H., Fischer, A., Ponce, F., Wernicke, T., Reich, C., Martens, M., & Kneissl, M. (2015). III-nitride deep UV laser on sapphire substrate. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 236-237). Article 7323746 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2015.7323746

Li, XH, Detchprohm, T, Dupuis, RD, Kao, TT, Shen, SC, Satter, MM, Yoder, PD, Wang, S, Wei, YO, Xie, H, Fischer, A, Ponce, F, Wernicke, T, Reich, C, Martens, M & Kneissl, M 2015, III-nitride deep UV laser on sapphire substrate. in 2015 IEEE Photonics Conference, IPC 2015., 7323746, Institute of Electrical and Electronics Engineers Inc., pp. 236-237, IEEE Photonics Conference, IPC 2015, Reston, United States, 8/30/15. https://doi.org/10.1109/IPCon.2015.7323746

@inproceedings{6f7fa9d6313a41f2b19714125a745e74,

title = "III-nitride deep UV laser on sapphire substrate",

abstract = "Record-low threshold III-nitride deep UV lasers at a wavelength range of 239-256 nm are demonstrated on sapphire substrates, including the first laser on sapphire below 260 nm. This paper will discuss growth, fabrication and characterization of the lasers in detail as well as future direction.",

author = "Li, {Xiao Hang} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Kao, {Tsung Ting} and Shen, {Shyh Chiang} and Satter, {Md Mahbub} and Yoder, {P. Douglas} and Shuo Wang and Wei, {Yong O.} and Hongen Xie and Alec Fischer and Fernando Ponce and Tim Wernicke and Christof Reich and Martin Martens and Michael Kneissl",

year = "2015",

month = nov,

day = "9",

doi = "10.1109/IPCon.2015.7323746",

language = "English (US)",

isbn = "9781479974658",

pages = "236--237",

booktitle = "2015 IEEE Photonics Conference, IPC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",

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AU - Li, Xiao Hang

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Kao, Tsung Ting

AU - Shen, Shyh Chiang

AU - Satter, Md Mahbub

AU - Yoder, P. Douglas

AU - Wang, Shuo

AU - Wei, Yong O.

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando

AU - Wernicke, Tim

AU - Reich, Christof

AU - Martens, Martin

AU - Kneissl, Michael

PY - 2015/11/9

Y1 - 2015/11/9

N2 - Record-low threshold III-nitride deep UV lasers at a wavelength range of 239-256 nm are demonstrated on sapphire substrates, including the first laser on sapphire below 260 nm. This paper will discuss growth, fabrication and characterization of the lasers in detail as well as future direction.

AB - Record-low threshold III-nitride deep UV lasers at a wavelength range of 239-256 nm are demonstrated on sapphire substrates, including the first laser on sapphire below 260 nm. This paper will discuss growth, fabrication and characterization of the lasers in detail as well as future direction.

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DO - 10.1109/IPCon.2015.7323746

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SN - 9781479974658

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EP - 237

BT - 2015 IEEE Photonics Conference, IPC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Photonics Conference, IPC 2015

Y2 - 30 August 2015 through 31 August 2015

ER -

III-nitride deep UV laser on sapphire substrate

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