Identification of the residual acceptors in undoped high purity InP

B. J. Skromme; G. E. Stillman; J. D. Oberstar; S. S. Chan

doi:10.1063/1.94738

Identification of the residual acceptors in undoped high purity InP

B. J. Skromme, G. E. Stillman, J. D. Oberstar, S. S. Chan

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Abstract

The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×10⁹-5×10¹¹ cm^- ²) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH₃-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.

Original language	English (US)
Pages (from-to)	319-321
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1063/1.94738
State	Published - 1984
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Identification of the residual acceptors in undoped high purity InP",

abstract = "The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109-5×1011 cm- 2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.",

author = "Skromme, {B. J.} and Stillman, {G. E.} and Oberstar, {J. D.} and Chan, {S. S.}",

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TY - JOUR

T1 - Identification of the residual acceptors in undoped high purity InP

AU - Skromme, B. J.

AU - Stillman, G. E.

AU - Oberstar, J. D.

AU - Chan, S. S.

PY - 1984

Y1 - 1984

N2 - The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109-5×1011 cm- 2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.

AB - The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109-5×1011 cm- 2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.

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Identification of the residual acceptors in undoped high purity InP

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