The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109-5×1011 cm- 2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1984|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)