Identification of the residual acceptors in undoped high purity InP

B. J. Skromme, G. E. Stillman, J. D. Oberstar, S. S. Chan

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109-5×1011 cm- 2) doses of those impurities. The measured values are 44.6±0.3, 41.3±0.3, and 41.0±0.3 meV, respectively. A comparison with the ionization energies of the residual acceptors in liquid phase epitaxial (LPE), PH3-vapor phase epitaxial, liquid encapsulated Czochralski, and polycrystalline samples indicates that C is almost never present as a residual acceptor in undoped InP. The ionization energy of the main residual acceptor in the LPE samples matches that of both Mg and Be.

Original languageEnglish (US)
Pages (from-to)319-321
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number3
DOIs
StatePublished - Dec 1 1984
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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