Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response

H. J. Barnaby, R. D. Schrimpf, R. L. Pease, P. Cole, T. Turflinger, J. Krieg, J. Titus

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

The input bias current (//) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiOi), increased //H is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 kradCSiO), //fl shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response. )

Original languageEnglish (US)
Pages (from-to)1666-1673
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
StatePublished - Dec 1 1999
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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