Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response

Hugh Barnaby, R. D. Schrimpf, R. L. Pease, P. Cole, T. Turflinger, J. Krieg, J. Titus

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

The input bias current (//) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiOi), increased //H is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 kradCSiO), //fl shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response. )

Original languageEnglish (US)
Pages (from-to)1666-1673
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
StatePublished - 1999
Externally publishedYes

Fingerprint

Comparator circuits
Transistors
transistors
degradation
Degradation
Networks (circuits)
electric potential
dosage
Dosimetry
emitters
Bias currents
Electric potential
recovery
Irradiation
trends
Recovery
irradiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response. / Barnaby, Hugh; Schrimpf, R. D.; Pease, R. L.; Cole, P.; Turflinger, T.; Krieg, J.; Titus, J.

In: IEEE Transactions on Nuclear Science, Vol. 46, No. 6 PART 1, 1999, p. 1666-1673.

Research output: Contribution to journalArticle

Barnaby, H, Schrimpf, RD, Pease, RL, Cole, P, Turflinger, T, Krieg, J & Titus, J 1999, 'Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response', IEEE Transactions on Nuclear Science, vol. 46, no. 6 PART 1, pp. 1666-1673.
Barnaby, Hugh ; Schrimpf, R. D. ; Pease, R. L. ; Cole, P. ; Turflinger, T. ; Krieg, J. ; Titus, J. / Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response. In: IEEE Transactions on Nuclear Science. 1999 ; Vol. 46, No. 6 PART 1. pp. 1666-1673.
@article{a6dc5f32bb0e415992286c6a28383c85,
title = "Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response",
abstract = "The input bias current (//) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiOi), increased //H is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 kradCSiO), //fl shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response. )",
author = "Hugh Barnaby and Schrimpf, {R. D.} and Pease, {R. L.} and P. Cole and T. Turflinger and J. Krieg and J. Titus",
year = "1999",
language = "English (US)",
volume = "46",
pages = "1666--1673",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6 PART 1",

}

TY - JOUR

T1 - Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response

AU - Barnaby, Hugh

AU - Schrimpf, R. D.

AU - Pease, R. L.

AU - Cole, P.

AU - Turflinger, T.

AU - Krieg, J.

AU - Titus, J.

PY - 1999

Y1 - 1999

N2 - The input bias current (//) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiOi), increased //H is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 kradCSiO), //fl shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response. )

AB - The input bias current (//) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiOi), increased //H is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 kradCSiO), //fl shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response. )

UR - http://www.scopus.com/inward/record.url?scp=0033351820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033351820&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033351820

VL - 46

SP - 1666

EP - 1673

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6 PART 1

ER -