Abstract
The input bias current (//) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiOi), increased //H is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 kradCSiO), //fl shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response. )
Original language | English (US) |
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Pages (from-to) | 1666-1673 |
Number of pages | 8 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 46 |
Issue number | 6 PART 1 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering