Using ion beam modification, films composed of synthesized "interphases" of ordered silica on OH-passivated (1 × 1)Si(100) underwent surface electro-chemical changes quantified by surface free energy via Sessile drop method and contact angle analysis using Young's equation and Van Oss theory. IBMM caused the surface free energies initially ranging from 26.0 mJ/m 2 to 57.3 mJ/m 2 to converge to 43.1-45.4 mJ/m 2 for various passivated and as-received wafer samples alike. Although TMAFM also identified topographic changes, these changes did not correlate to the change of surface free energies. Ion beam modification of the ordered silica film on Si(100) surface is analyzed using 3.045 MeV 16O(α, α) 16O nuclear resonance scattering (NRS) in conjunction with channeling in 〈1 1 1〉 direction, which demonstrated the convergence of the partially ordered oxygen to amorphous at about 55 μC/mm 2 He ++ flux. Additionally, Si surface peak channeling in 〈1 0 0〉 and 〈1 1 1〉 directions also experienced an uptrend in areal density as incident ion flux increased, while the rotating random Si signal height remains stable, showing a disruption in the surface order during IBMM.
|Original language||English (US)|
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|State||Published - Feb 1 2012|
- Contact angle
ASJC Scopus subject areas
- Nuclear and High Energy Physics