TY - GEN
T1 - IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100)
AU - Herberts, Nicole
AU - Bradley, James Douglas
AU - Culbertson, Robert
AU - Shaw, Justin
AU - Atluri, Vasu
PY - 2007
Y1 - 2007
N2 - Ion Beam Analysis (IBA) using 4He+ ion channeling combined with Nuclear Resonance Analysis (NRA) and 3DMultiString computer simulations detect order in silicon dioxide (SiO2) nucleated on (1×1) Si(100) via the Herbots-Atluri clean (U.S. patent 6,613,677) in air at 300 K. Alignment of the SiO2 to Si(100) is also supported by 10 keV Reflection High Energy Electron Diffraction (RHEED). Infrared spectroscopy of ordered oxides exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial region near Si, supporting the presence of a well defined bond-length and stoichiometry as detected by IBA and RHEED. In this work IBA is combined with 3DMultiString to identify a new heteroepitaxial nanophase of tetragonally distorted β-cristobalite SiO 2 (annotated β3-c SiO2) extending to a critical thickness of 2 nm from the (1×1) Si(100)/β-c SiO2 interface to the β-c SiO2/amorphous SiO2 interface (annotated β3-c SiO2/a-SiO2). 3DMultiString simulations of IBA data taken on the newly identifiedfi-c SiO 2/(1×1) Si(100) interphase includes channeling along the three <100>, <110>, and <111> axes of Si(100) in combination 160(α, α)160 3.045 MeV NRA to measure oxygen areal densities corresponding to nm-thick films. In this manner, the critical thickness of the new heteroepitaxial β-c SiO2 nanophase can be established as a function of oxygen coverage.
AB - Ion Beam Analysis (IBA) using 4He+ ion channeling combined with Nuclear Resonance Analysis (NRA) and 3DMultiString computer simulations detect order in silicon dioxide (SiO2) nucleated on (1×1) Si(100) via the Herbots-Atluri clean (U.S. patent 6,613,677) in air at 300 K. Alignment of the SiO2 to Si(100) is also supported by 10 keV Reflection High Energy Electron Diffraction (RHEED). Infrared spectroscopy of ordered oxides exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial region near Si, supporting the presence of a well defined bond-length and stoichiometry as detected by IBA and RHEED. In this work IBA is combined with 3DMultiString to identify a new heteroepitaxial nanophase of tetragonally distorted β-cristobalite SiO 2 (annotated β3-c SiO2) extending to a critical thickness of 2 nm from the (1×1) Si(100)/β-c SiO2 interface to the β-c SiO2/amorphous SiO2 interface (annotated β3-c SiO2/a-SiO2). 3DMultiString simulations of IBA data taken on the newly identifiedfi-c SiO 2/(1×1) Si(100) interphase includes channeling along the three <100>, <110>, and <111> axes of Si(100) in combination 160(α, α)160 3.045 MeV NRA to measure oxygen areal densities corresponding to nm-thick films. In this manner, the critical thickness of the new heteroepitaxial β-c SiO2 nanophase can be established as a function of oxygen coverage.
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M3 - Conference contribution
AN - SCOPUS:70349929804
SN - 9781605604282
T3 - Materials Research Society Symposium Proceedings
SP - 103
EP - 108
BT - Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
T2 - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2007
ER -