IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100)

Nicole Herberts, James Douglas Bradley, Robert Culbertson, Justin Shaw, Vasu Atluri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion Beam Analysis (IBA) using 4He+ ion channeling combined with Nuclear Resonance Analysis (NRA) and 3DMultiString computer simulations detect order in silicon dioxide (SiO2) nucleated on (1×1) Si(100) via the Herbots-Atluri clean (U.S. patent 6,613,677) in air at 300 K. Alignment of the SiO2 to Si(100) is also supported by 10 keV Reflection High Energy Electron Diffraction (RHEED). Infrared spectroscopy of ordered oxides exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial region near Si, supporting the presence of a well defined bond-length and stoichiometry as detected by IBA and RHEED. In this work IBA is combined with 3DMultiString to identify a new heteroepitaxial nanophase of tetragonally distorted β-cristobalite SiO 2 (annotated β3-c SiO2) extending to a critical thickness of 2 nm from the (1×1) Si(100)/β-c SiO2 interface to the β-c SiO2/amorphous SiO2 interface (annotated β3-c SiO2/a-SiO2). 3DMultiString simulations of IBA data taken on the newly identifiedfi-c SiO 2/(1×1) Si(100) interphase includes channeling along the three <100>, <110>, and <111> axes of Si(100) in combination 160(α, α)160 3.045 MeV NRA to measure oxygen areal densities corresponding to nm-thick films. In this manner, the critical thickness of the new heteroepitaxial β-c SiO2 nanophase can be established as a function of oxygen coverage.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages103-108
Number of pages6
Volume996
StatePublished - 2007
EventCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Other

OtherCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

Fingerprint

Ion beams
ion beams
Reflection high energy electron diffraction
Silicon Dioxide
high energy electrons
electron diffraction
Oxygen
patents
Bond length
oxygen
Thick films
Stoichiometry
Oxides
Light absorption
thick films
stoichiometry
Infrared spectroscopy
optical absorption
computerized simulation
infrared spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Herberts, N., Bradley, J. D., Culbertson, R., Shaw, J., & Atluri, V. (2007). IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100). In Materials Research Society Symposium Proceedings (Vol. 996, pp. 103-108)

IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100). / Herberts, Nicole; Bradley, James Douglas; Culbertson, Robert; Shaw, Justin; Atluri, Vasu.

Materials Research Society Symposium Proceedings. Vol. 996 2007. p. 103-108.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Herberts, N, Bradley, JD, Culbertson, R, Shaw, J & Atluri, V 2007, IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100). in Materials Research Society Symposium Proceedings. vol. 996, pp. 103-108, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.
Herberts N, Bradley JD, Culbertson R, Shaw J, Atluri V. IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100). In Materials Research Society Symposium Proceedings. Vol. 996. 2007. p. 103-108
Herberts, Nicole ; Bradley, James Douglas ; Culbertson, Robert ; Shaw, Justin ; Atluri, Vasu. / IBA of ordered ultra-thin SiO2 grown on (1×1) Si(100). Materials Research Society Symposium Proceedings. Vol. 996 2007. pp. 103-108
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