TY - JOUR
T1 - Hydrosiloxane modified styrene-diene block copolymer resists
AU - Gabor, Allen H.
AU - Lehner, Eric A.
AU - Mao, Guoping
AU - Ober, Christopher K.
AU - Long, Timothy E.
AU - Schell, Brian A.
AU - Tiberio, Richard C.
N1 - Funding Information:
Handlin, at the Shell Development Company, for the gift of the styrene-butadiene block copolymer. This work was performed in part at the National Nanofabrication Facility which is supported by the National Science Foundation under Grant ECS-8619049, Cornell University and industrial affiliates. This work also made use of MRL Central Facilities supported by the National Science Foundation under Award No. DMR-.9121654.
Publisher Copyright:
© 1993 SPIE. All rights reserved.
PY - 1993/9/15
Y1 - 1993/9/15
N2 - Block copolymers are a class of polymers deserving of more investigation by the resist community. We are investigating styrene-hydrosiloxane modified diene block copolymers which have good properties for use as negative tone, electron sensitive resists. Resolution better than 0. 1 xm, sensitivity of 30 tC/cm2 and contrast of 2.8 have been demonstrated using a poly(styrene)-pentamethyldlisiloxane modified poly(isoprene) block copolymer (PS-b-PDPI). Used in a bilayer resist scheme, PS-b-PDPI has an oxygen RIE selectivity ratio of 42 with respect to poly(imide). A poly(styrene)-heptamethyltrisiloxane modified poly(butadiene) block copolymer (PS-b-HTPB) has an oxygen RIE selectivity ratio of 54 with respect to poly(imide). In a bilayer resist system, using PS-b-PDPI as the imageable layer, patterns of 0.3 pm wide lines and 1.5 pm wide spaces have been transferred through a 1.2 im thick poly(imide) planarizing layer.
AB - Block copolymers are a class of polymers deserving of more investigation by the resist community. We are investigating styrene-hydrosiloxane modified diene block copolymers which have good properties for use as negative tone, electron sensitive resists. Resolution better than 0. 1 xm, sensitivity of 30 tC/cm2 and contrast of 2.8 have been demonstrated using a poly(styrene)-pentamethyldlisiloxane modified poly(isoprene) block copolymer (PS-b-PDPI). Used in a bilayer resist scheme, PS-b-PDPI has an oxygen RIE selectivity ratio of 42 with respect to poly(imide). A poly(styrene)-heptamethyltrisiloxane modified poly(butadiene) block copolymer (PS-b-HTPB) has an oxygen RIE selectivity ratio of 54 with respect to poly(imide). In a bilayer resist system, using PS-b-PDPI as the imageable layer, patterns of 0.3 pm wide lines and 1.5 pm wide spaces have been transferred through a 1.2 im thick poly(imide) planarizing layer.
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U2 - 10.1117/12.154785
DO - 10.1117/12.154785
M3 - Conference article
AN - SCOPUS:85059515260
SN - 0277-786X
VL - 1925
SP - 499
EP - 506
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Advances in Resist Technology and Processing X 1993
Y2 - 28 February 1993 through 5 March 1993
ER -