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Dive into the research topics of 'Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors'. Together they form a unique fingerprint.- Sort by
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Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors
Xingji Li, Jianqun Yang, Daniel M. Fleetwood, Chaoming Liu, Yi Dan Wei, Hugh Barnaby, K. F. Galloway
- Applied Nanoionics, Center for (CANi)
- Embedded Systems, Consortium for (CES)
- Solid State Electronics Research Center (CSSER)
- Electrical Engineering
- Connection One (C1)
- Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)
- Engineering, Ira A. Fulton Schools of (IAFSE)
- Adaptive Neural Systems, Center for (ANS)
Research output: Contribution to journal › Article › peer-review
13
Scopus
citations