3 Citations (Scopus)

Abstract

The effects of 70-keV and 1-MeV electron irra-diations on gate controlled lateral PNP (GLPNP) transistors are evaluated with and without molecular hydrogen (H2) soaking. At a given ionization dose, 1-MeV electron irradiation causes more degradation of current gain in GLPNP transistors that have not been soaked in H2 than 70-keV electrons. This is be-cause linear bipolar transistors are sensitive to both ionization and displacement damage effects, and because 1-MeV electrons induce significant displacement damage in Si-based bipolar junction transistors and 70-keV electrons do not. In H2-soaked transistors, the degradation is much larger than in unsoaked devices, and similar amounts of degradation are observed for 70-keV electron irradiation and 1-MeV electron irradiation. This occurs because ionization-induced release, transport, and reactions of hydrogen in the bipolar base oxide greatly enhance interface-trap buildup and dominate device response in H2 soaked devices, and because charge yield ratios for 70-keV and 1-MeV electron irradiation differ by less than ~20%.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - May 15 2018

Fingerprint

junction transistors
Electron irradiation
soaking
Bipolar transistors
electron irradiation
bipolar transistors
damage
Ionization
Hydrogen
Transistors
transistors
Electrons
hydrogen
degradation
ionization
Degradation
electrons
causes
Dosimetry
traps

Keywords

  • bipolar junction transistor
  • Current measurement
  • Degradation
  • electron radiation
  • Hydrogen
  • hydrogen
  • interface traps
  • Junctions
  • Logic gates
  • Radiation effects
  • recombination
  • Transistors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Hydrogen Soaking, Displacement-Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors. / Li, Xingji; Yang, Jianqun; Fleetwood, Daniel M.; Liu, Chaoming; Wei, Yi Dan; Barnaby, Hugh; Galloway, K. F.

In: IEEE Transactions on Nuclear Science, 15.05.2018.

Research output: Contribution to journalArticle

Li, Xingji ; Yang, Jianqun ; Fleetwood, Daniel M. ; Liu, Chaoming ; Wei, Yi Dan ; Barnaby, Hugh ; Galloway, K. F. / Hydrogen Soaking, Displacement-Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors. In: IEEE Transactions on Nuclear Science. 2018.
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abstract = "The effects of 70-keV and 1-MeV electron irra-diations on gate controlled lateral PNP (GLPNP) transistors are evaluated with and without molecular hydrogen (H2) soaking. At a given ionization dose, 1-MeV electron irradiation causes more degradation of current gain in GLPNP transistors that have not been soaked in H2 than 70-keV electrons. This is be-cause linear bipolar transistors are sensitive to both ionization and displacement damage effects, and because 1-MeV electrons induce significant displacement damage in Si-based bipolar junction transistors and 70-keV electrons do not. In H2-soaked transistors, the degradation is much larger than in unsoaked devices, and similar amounts of degradation are observed for 70-keV electron irradiation and 1-MeV electron irradiation. This occurs because ionization-induced release, transport, and reactions of hydrogen in the bipolar base oxide greatly enhance interface-trap buildup and dominate device response in H2 soaked devices, and because charge yield ratios for 70-keV and 1-MeV electron irradiation differ by less than ~20{\%}.",
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AU - Wei, Yi Dan

AU - Barnaby, Hugh

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N2 - The effects of 70-keV and 1-MeV electron irra-diations on gate controlled lateral PNP (GLPNP) transistors are evaluated with and without molecular hydrogen (H2) soaking. At a given ionization dose, 1-MeV electron irradiation causes more degradation of current gain in GLPNP transistors that have not been soaked in H2 than 70-keV electrons. This is be-cause linear bipolar transistors are sensitive to both ionization and displacement damage effects, and because 1-MeV electrons induce significant displacement damage in Si-based bipolar junction transistors and 70-keV electrons do not. In H2-soaked transistors, the degradation is much larger than in unsoaked devices, and similar amounts of degradation are observed for 70-keV electron irradiation and 1-MeV electron irradiation. This occurs because ionization-induced release, transport, and reactions of hydrogen in the bipolar base oxide greatly enhance interface-trap buildup and dominate device response in H2 soaked devices, and because charge yield ratios for 70-keV and 1-MeV electron irradiation differ by less than ~20%.

AB - The effects of 70-keV and 1-MeV electron irra-diations on gate controlled lateral PNP (GLPNP) transistors are evaluated with and without molecular hydrogen (H2) soaking. At a given ionization dose, 1-MeV electron irradiation causes more degradation of current gain in GLPNP transistors that have not been soaked in H2 than 70-keV electrons. This is be-cause linear bipolar transistors are sensitive to both ionization and displacement damage effects, and because 1-MeV electrons induce significant displacement damage in Si-based bipolar junction transistors and 70-keV electrons do not. In H2-soaked transistors, the degradation is much larger than in unsoaked devices, and similar amounts of degradation are observed for 70-keV electron irradiation and 1-MeV electron irradiation. This occurs because ionization-induced release, transport, and reactions of hydrogen in the bipolar base oxide greatly enhance interface-trap buildup and dominate device response in H2 soaked devices, and because charge yield ratios for 70-keV and 1-MeV electron irradiation differ by less than ~20%.

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