Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Xingji Li, Jianqun Yang, Daniel M. Fleetwood, Chaoming Liu, Yi Dan Wei, Hugh Barnaby, K. F. Galloway

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The effects of 70-keV and 1-MeV electron irradiations on gate-controlled lateral PNP (GLPNP) transistors are evaluated with and without molecular hydrogen (H2) soaking. At a given ionization dose, 1-MeV electron irradiation causes more degradation of current gain in GLPNP transistors that have not been soaked in H2 than 70-keV electrons. This is because linear bipolar transistors are sensitive to both ionization and displacement damage effects, and because 1-MeV electrons induce significant displacement damage in Si-based bipolar junction transistors and 70-keV electrons do not. In H2-soaked transistors, the degradation is much larger than in unsoaked devices, and similar amounts of degradation are observed for 70-keV electron irradiation and 1-MeV electron irradiation. This occurs because ionization-induced release, transport, and reactions of hydrogen in the bipolar-base oxide greatly enhance interface-trap buildup and dominate device response in H2-soaked devices, and because charge yield ratios for 70-keV and 1-MeV electron irradiations differ by less than ∼20%.

Original languageEnglish (US)
Pages (from-to)1271-1276
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number6
DOIs
StatePublished - Jun 2018

Keywords

  • Bipolar junction transistor (BJT)
  • electron radiation
  • hydrogen
  • interface traps
  • recombination

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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