Hydrogen-related, deeply bound excitons in Mg-doped GaN films

R. Juday, A. M. Fischer, Y. Huang, J. Y. Huang, H. J. Kim, J. H. Ryou, R. D. Dupuis, D. P. Bour, Fernando Ponce

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation at 5 kV. The intensity of the 3.37 eV peak correlates monotonically with the resistivity of the films. By annealing the films in N2 and N2/H2 atmospheres, the 3.37 and 3.416 eV transitions are shown to be related to hydrogen.

Original languageEnglish (US)
Article number082103
JournalApplied Physics Letters
Volume103
Issue number8
DOIs
StatePublished - Aug 19 2013

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excitons
hydrogen
cathodoluminescence
liquid helium
metalorganic chemical vapor deposition
electron beams
luminescence
atmospheres
electrical resistivity
irradiation
annealing
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Juday, R., Fischer, A. M., Huang, Y., Huang, J. Y., Kim, H. J., Ryou, J. H., ... Ponce, F. (2013). Hydrogen-related, deeply bound excitons in Mg-doped GaN films. Applied Physics Letters, 103(8), [082103]. https://doi.org/10.1063/1.4819029

Hydrogen-related, deeply bound excitons in Mg-doped GaN films. / Juday, R.; Fischer, A. M.; Huang, Y.; Huang, J. Y.; Kim, H. J.; Ryou, J. H.; Dupuis, R. D.; Bour, D. P.; Ponce, Fernando.

In: Applied Physics Letters, Vol. 103, No. 8, 082103, 19.08.2013.

Research output: Contribution to journalArticle

Juday, R, Fischer, AM, Huang, Y, Huang, JY, Kim, HJ, Ryou, JH, Dupuis, RD, Bour, DP & Ponce, F 2013, 'Hydrogen-related, deeply bound excitons in Mg-doped GaN films', Applied Physics Letters, vol. 103, no. 8, 082103. https://doi.org/10.1063/1.4819029
Juday R, Fischer AM, Huang Y, Huang JY, Kim HJ, Ryou JH et al. Hydrogen-related, deeply bound excitons in Mg-doped GaN films. Applied Physics Letters. 2013 Aug 19;103(8). 082103. https://doi.org/10.1063/1.4819029
Juday, R. ; Fischer, A. M. ; Huang, Y. ; Huang, J. Y. ; Kim, H. J. ; Ryou, J. H. ; Dupuis, R. D. ; Bour, D. P. ; Ponce, Fernando. / Hydrogen-related, deeply bound excitons in Mg-doped GaN films. In: Applied Physics Letters. 2013 ; Vol. 103, No. 8.
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