Hydrogen-related, deeply bound excitons in Mg-doped GaN films

R. Juday, A. M. Fischer, Y. Huang, J. Y. Huang, H. J. Kim, J. H. Ryou, R. D. Dupuis, D. P. Bour, Fernando Ponce

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9 Scopus citations

Abstract

Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation at 5 kV. The intensity of the 3.37 eV peak correlates monotonically with the resistivity of the films. By annealing the films in N2 and N2/H2 atmospheres, the 3.37 and 3.416 eV transitions are shown to be related to hydrogen.

Original languageEnglish (US)
Article number082103
JournalApplied Physics Letters
Volume103
Issue number8
DOIs
StatePublished - Aug 19 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Juday, R., Fischer, A. M., Huang, Y., Huang, J. Y., Kim, H. J., Ryou, J. H., Dupuis, R. D., Bour, D. P., & Ponce, F. (2013). Hydrogen-related, deeply bound excitons in Mg-doped GaN films. Applied Physics Letters, 103(8), [082103]. https://doi.org/10.1063/1.4819029