Hydrogen in crystalline semiconductors. A review of experimental results

N. M. Johnson, C. Doland, F. Ponce, J. Walker, G. Anderson

Research output: Contribution to journalArticle

93 Scopus citations

Abstract

The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.

Original languageEnglish (US)
Pages (from-to)3-20
Number of pages18
JournalPhysica B: Physics of Condensed Matter
Volume170
Issue number1-4
DOIs
StatePublished - Apr 1991
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this