Hydrogen in crystalline semiconductors. A review of experimental results

N. M. Johnson, C. Doland, Fernando Ponce, J. Walker, G. Anderson

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.

Original languageEnglish (US)
Pages (from-to)3-20
Number of pages18
JournalPhysica B: Physics of Condensed Matter
Volume170
Issue number1-4
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

Hydrogen
Semiconductor materials
Crystalline materials
hydrogen
Doping (additives)
tabulation
Gallium arsenide
Silicon
gallium
Single crystals
dissociation
Defects
single crystals
defects
silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hydrogen in crystalline semiconductors. A review of experimental results. / Johnson, N. M.; Doland, C.; Ponce, Fernando; Walker, J.; Anderson, G.

In: Physica B: Physics of Condensed Matter, Vol. 170, No. 1-4, 1991, p. 3-20.

Research output: Contribution to journalArticle

Johnson, N. M. ; Doland, C. ; Ponce, Fernando ; Walker, J. ; Anderson, G. / Hydrogen in crystalline semiconductors. A review of experimental results. In: Physica B: Physics of Condensed Matter. 1991 ; Vol. 170, No. 1-4. pp. 3-20.
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