Abstract
A model for defects in a-Si:H has been deduced from experiments on samples prepared under widely varying conditions. Defects seem to be localized low density regions induced by and containing short polymeric SiH//x units. For high spin samples, the material is effectively a highly cross-linked polymer; for low spin samples, the defects are widely separated.
| Original language | English (US) |
|---|---|
| Title of host publication | Inst Phys Conf Ser |
| Place of Publication | London, Engl |
| Publisher | Inst of Phys |
| Pages | 1143-1146 |
| Number of pages | 4 |
| Edition | 43 |
| State | Published - 1979 |
| Externally published | Yes |
| Event | Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978 |
Other
| Other | Pap from the Int Conf on the Phys of Semicond, 14th |
|---|---|
| City | Edinburgh, Scotl |
| Period | 9/4/78 → 9/8/78 |
ASJC Scopus subject areas
- General Engineering