HYDROGEN ENVIRONMENTS AND DEFECTS IN PLASMA-DEPOSITED a-Si: H.

D. K. Biegelsen, G. Lucovsky, J. C. Knights, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

A model for defects in a-Si:H has been deduced from experiments on samples prepared under widely varying conditions. Defects seem to be localized low density regions induced by and containing short polymeric SiH//x units. For high spin samples, the material is effectively a highly cross-linked polymer; for low spin samples, the defects are widely separated.

Original languageEnglish (US)
Title of host publicationInst Phys Conf Ser
Place of PublicationLondon, Engl
PublisherInst of Phys
Pages1143-1146
Number of pages4
Edition43
Publication statusPublished - 1979
Externally publishedYes
EventPap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl
Duration: Sep 4 1978Sep 8 1978

Other

OtherPap from the Int Conf on the Phys of Semicond, 14th
CityEdinburgh, Scotl
Period9/4/789/8/78

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Biegelsen, D. K., Lucovsky, G., Knights, J. C., & Nemanich, R. (1979). HYDROGEN ENVIRONMENTS AND DEFECTS IN PLASMA-DEPOSITED a-Si: H. In Inst Phys Conf Ser (43 ed., pp. 1143-1146). London, Engl: Inst of Phys.