Engineering & Materials Science
Desorption
92%
Silicon carbide
86%
Plasmas
74%
Hydrogen
64%
Thermal desorption
38%
Photoelectron spectroscopy
27%
Temperature programmed desorption
24%
Epitaxial growth
22%
Temperature
19%
Dangling bonds
14%
X rays
14%
Semiconductor materials
14%
Silicon
12%
Chemical reactivity
12%
Gate dielectrics
11%
Sublimation
11%
Fluorine
11%
Silanes
10%
Graphene
9%
Metallizing
9%
Doping (additives)
8%
Contamination
7%
Oxygen
6%
Carbon
6%
Defects
5%
Experiments
2%
Physics & Astronomy
hydrofluoric acid
100%
hydrogen plasma
91%
silicon carbides
77%
desorption
70%
hydrogen
49%
x ray spectroscopy
12%
photoelectron spectroscopy
10%
silicon
9%
temperature
7%
hydroxides
7%
sublimation
6%
hydrides
6%
fluorine
6%
reactivity
6%
epitaxy
6%
contamination
5%
electric contacts
5%
graphene
5%
carbon
4%
oxygen
3%
defects
3%
Chemical Compounds
Hydrogen Fluoride
99%
Silicon Carbide
89%
Desorption
61%
Plasma
49%
Hydrogen
40%
Surface
25%
Epitaxial Growth
15%
Photoelectron Spectroscopy
12%
Silicon Hydride
9%
Semiconductor
9%
Dangling Bond
8%
Sublimation
7%
Chemical Reactivity
6%
Dielectric Material
5%
Doping Material
5%
Fluorine Atom
5%
Hydroxide
5%
Monolayer
4%
Graphene
4%
Dioxygen
3%
Carbon Atom
2%