Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Engineering & Materials Science

• Desorption 92%
• Silicon carbide 86%
• Plasmas 74%
• Hydrogen 64%
• Thermal desorption 38%
• Photoelectron spectroscopy 27%
• Temperature programmed desorption 24%
• Epitaxial growth 22%
• Temperature 19%
• Dangling bonds 14%
• X rays 14%
• Semiconductor materials 14%
• Silicon 12%
• Chemical reactivity 12%
• Gate dielectrics 11%
• Sublimation 11%
• Fluorine 11%
• Silanes 10%
• Graphene 9%
• Metallizing 9%
• Doping (additives) 8%
• Contamination 7%
• Oxygen 6%
• Carbon 6%
• Defects 5%
• Experiments 2%

Physics & Astronomy

• hydrofluoric acid 100%
• hydrogen plasma 91%
• silicon carbides 77%
• desorption 70%
• hydrogen 49%
• x ray spectroscopy 12%
• photoelectron spectroscopy 10%
• silicon 9%
• temperature 7%
• hydroxides 7%
• sublimation 6%
• hydrides 6%
• fluorine 6%
• reactivity 6%
• epitaxy 6%
• contamination 5%
• electric contacts 5%
• graphene 5%
• carbon 4%
• oxygen 3%
• defects 3%

Chemical Compounds

• Hydrogen Fluoride 99%
• Silicon Carbide 89%
• Desorption 61%
• Plasma 49%
• Hydrogen 40%
• Surface 25%
• Epitaxial Growth 15%
• Photoelectron Spectroscopy 12%
• Silicon Hydride 9%
• Semiconductor 9%
• Dangling Bond 8%
• Sublimation 7%
• Chemical Reactivity 6%
• Dielectric Material 5%
• Doping Material 5%
• Fluorine Atom 5%
• Hydroxide 5%
• Monolayer 4%
• Graphene 4%
• Dioxygen 3%
• Carbon Atom 2%