An atom-probe field-ion microscope was successfully employed for the first time to study semiconductor Si surfaces. Using a magnetic-sector type we have observed pure silicon Si+, monohydride SiH+, and dihydride SiH2+, ions from the well-ordered H-covered (111) and (110) planes, and pure silicon Si+, monohydride SiH+, and silane SiH4+ ions from the disordered (311) areas. This observation is taken as the evidence for the formation of the silicon dihydride and trihydride surface phases suggested by recent ultraviolet photoemission studies.
ASJC Scopus subject areas
- Physics and Astronomy(all)