Hydrogen chemisorption on Si surfaces analyzed by magnetic-sector, atom-probe, field-ion microscopy

Toshio Sakurai, E. W. Müller, R. J. Culbertson, A. J. Melmed

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Abstract

An atom-probe field-ion microscope was successfully employed for the first time to study semiconductor Si surfaces. Using a magnetic-sector type we have observed pure silicon Si+, monohydride SiH+, and dihydride SiH2+, ions from the well-ordered H-covered (111) and (110) planes, and pure silicon Si+, monohydride SiH+, and silane SiH4+ ions from the disordered (311) areas. This observation is taken as the evidence for the formation of the silicon dihydride and trihydride surface phases suggested by recent ultraviolet photoemission studies.

Original languageEnglish (US)
Pages (from-to)578-581
Number of pages4
JournalPhysical Review Letters
Volume39
Issue number9
DOIs
StatePublished - Jan 1 1977
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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