Hydrofluoric acid treatment of amorphous silicon films for photovoltaic processing

M. Burrows, U. Das, M. Lu, Stuart Bowden, R. Opila, R. Birkmire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hydrofluoric acid (HF) is commonly used in Si wafer processing as a surface treatment to remove surface oxide and provide a H-terminated surface passivation that resists contamination within short time scales. During silicon heterojunction (SHJ) device fabrication a similar oxide removal and surface passivation is desired for doped and intrinsic hydrogenated amorphous silicon (aSi) films and therefore studied as follows. X-ray photoelectron spectroscopy is employed to evaluate surface chemical composition, especially with regard to oxygen removal, resistance to hydrocarbon adsorption, and fluorine incorporation post HF treatment. Variable angle spectroscopic ellipsometry is used to determine the growth rate of native oxide and terminal oxide thickness. The electrical effects of aSi native oxide at contact interfaces of SHJ cells are evaluated with current-voltage measurements. HF treatment is effective for oxide removal and provides surface passivation of aSi similar to the crystalline counter-part. Further, fluorine bonding is enhanced for p-type aSi films and control of native oxide thickness below 20Å is not essential for typical electrical contacts of the SHJ photovoltaic cell.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages431-436
Number of pages6
Volume989
StatePublished - 2007
Externally publishedYes
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

Fingerprint

Hydrofluoric Acid
Hydrofluoric acid
Amorphous silicon
Oxides
Silicon
Processing
Passivation
Heterojunctions
Fluorine
Spectroscopic ellipsometry
Photovoltaic cells
Voltage measurement
Silicon oxides
Electric current measurement
Hydrocarbons
Surface treatment
Contamination
X ray photoelectron spectroscopy
Oxygen
Crystalline materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Burrows, M., Das, U., Lu, M., Bowden, S., Opila, R., & Birkmire, R. (2007). Hydrofluoric acid treatment of amorphous silicon films for photovoltaic processing. In Materials Research Society Symposium Proceedings (Vol. 989, pp. 431-436)

Hydrofluoric acid treatment of amorphous silicon films for photovoltaic processing. / Burrows, M.; Das, U.; Lu, M.; Bowden, Stuart; Opila, R.; Birkmire, R.

Materials Research Society Symposium Proceedings. Vol. 989 2007. p. 431-436.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Burrows, M, Das, U, Lu, M, Bowden, S, Opila, R & Birkmire, R 2007, Hydrofluoric acid treatment of amorphous silicon films for photovoltaic processing. in Materials Research Society Symposium Proceedings. vol. 989, pp. 431-436, 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.
Burrows M, Das U, Lu M, Bowden S, Opila R, Birkmire R. Hydrofluoric acid treatment of amorphous silicon films for photovoltaic processing. In Materials Research Society Symposium Proceedings. Vol. 989. 2007. p. 431-436
Burrows, M. ; Das, U. ; Lu, M. ; Bowden, Stuart ; Opila, R. ; Birkmire, R. / Hydrofluoric acid treatment of amorphous silicon films for photovoltaic processing. Materials Research Society Symposium Proceedings. Vol. 989 2007. pp. 431-436
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