Hydrodynamic theory for spatially inhomogeneous semiconductor lasers. I. A microscopic approach

Jianzhong Li; C. Z. Ning

doi:10.1103/PhysRevA.66.023802

Hydrodynamic theory for spatially inhomogeneous semiconductor lasers. I. A microscopic approach

Jianzhong Li, C. Z. Ning

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A coupled diffusion model (CDM) for the hydrodynamic variables (carrier densities and temperatures) for the electron-hole plasma in a semiconductor quantum well optical device was derived. The resultant model enables to obtain and analyze all the DCs for an optical device in the general two-component case and under the ambipolar diffusion approximation from a microscopic point of view.

Original language	English (US)
Article number	023802
Pages (from-to)	023802/1-023802/18
Journal	Physical Review A - Atomic, Molecular, and Optical Physics
Volume	66
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevA.66.023802
State	Published - Aug 2002
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1103/PhysRevA.66.023802

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abstract = "A coupled diffusion model (CDM) for the hydrodynamic variables (carrier densities and temperatures) for the electron-hole plasma in a semiconductor quantum well optical device was derived. The resultant model enables to obtain and analyze all the DCs for an optical device in the general two-component case and under the ambipolar diffusion approximation from a microscopic point of view.",

author = "Jianzhong Li and Ning, {C. Z.}",

year = "2002",

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AB - A coupled diffusion model (CDM) for the hydrodynamic variables (carrier densities and temperatures) for the electron-hole plasma in a semiconductor quantum well optical device was derived. The resultant model enables to obtain and analyze all the DCs for an optical device in the general two-component case and under the ambipolar diffusion approximation from a microscopic point of view.

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Hydrodynamic theory for spatially inhomogeneous semiconductor lasers. I. A microscopic approach

Abstract

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