Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode

Carl L. Gardner

doi:10.1109/16.182528

Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n⁺-n-n⁺ Diode

Carl L. Gardner

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.

Original language	English (US)
Pages (from-to)	455-457
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	2
DOIs	https://doi.org/10.1109/16.182528
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.182528

Cite this

@article{075fbd6d5ba249adba4b124e4b0a7952,

title = "Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode",

abstract = "Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.",

author = "Gardner, {Carl L.}",

year = "1993",

doi = "10.1109/16.182528",

language = "English (US)",

volume = "40",

pages = "455--457",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode

AU - Gardner, Carl L.

PY - 1993

Y1 - 1993

N2 - Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.

AB - Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.

UR - http://www.scopus.com/inward/record.url?scp=28844504708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28844504708&partnerID=8YFLogxK

U2 - 10.1109/16.182528

DO - 10.1109/16.182528

M3 - Article

AN - SCOPUS:28844504708

SN - 0018-9383

VL - 40

SP - 455

EP - 457

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n⁺-n-n⁺ Diode

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this