Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.

Original languageEnglish (US)
Pages (from-to)455-457
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume40
Issue number2
DOIs
StatePublished - 1993
Externally publishedYes

Fingerprint

Shock waves
Diodes
Hydrodynamics
Electrons
Boltzmann equation
Semiconductor devices
Heat conduction
Electron energy levels
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode. / Gardner, Carl.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 2, 1993, p. 455-457.

Research output: Contribution to journalArticle

@article{075fbd6d5ba249adba4b124e4b0a7952,
title = "Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode",
abstract = "Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.",
author = "Carl Gardner",
year = "1993",
doi = "10.1109/16.182528",
language = "English (US)",
volume = "40",
pages = "455--457",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Hydrodynamic and Monte Carlo Simulation of an Electron Shock Wave in a 1-um n+-n-n+ Diode

AU - Gardner, Carl

PY - 1993

Y1 - 1993

N2 - Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.

AB - Hydrodynamic model simulations of a steady-state electron shock wave in a 1-pm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model.

UR - http://www.scopus.com/inward/record.url?scp=28844504708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28844504708&partnerID=8YFLogxK

U2 - 10.1109/16.182528

DO - 10.1109/16.182528

M3 - Article

AN - SCOPUS:28844504708

VL - 40

SP - 455

EP - 457

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -