Abstract
The authors present a novel hydrodynamic approach to the study of DC and AC hot-carrier transport in semiconductors. To this end use is made of a total-energy scheme which incorporates simultaneously the kinetic and potential energy associated with different conduction band minima. Furthermore, convective and diffusive contributions are considered by including the variance of velocity-velocity and velocity-energy fluctuations. Together with static characteristics, a small-signal analysis under spatially homogeneous conditions of the most important response functions of the electron system (e.g. differential mobility, diffusivity, velocity-noise spectrum, etc) is developed consistently. The validation of the present approach is supported by an excellent comparison with Monte Carlo results carried out for the case of n-Si at 300 K.
| Original language | English (US) |
|---|---|
| Article number | 016 |
| Pages (from-to) | 1283-1290 |
| Number of pages | 8 |
| Journal | Semiconductor Science and Technology |
| Volume | 8 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry