Hybrid particle-based full-band analysis of ultra-small MOS

S. J. Wigger; Stephen Goodnick; Marco Saraniti

doi:10.1155/2001/94360

Hybrid particle-based full-band analysis of ultra-small MOS

S. J. Wigger, Stephen Goodnick, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.

Original language	English (US)
Pages (from-to)	125-129
Number of pages	5
Journal	VLSI Design
Volume	13
Issue number	1-4
DOIs	https://doi.org/10.1155/2001/94360
State	Published - 2001

Keywords

Cellular Automata
Device modeling
Monte Carlo
Multi-grid

ASJC Scopus subject areas

Hardware and Architecture
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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10.1155/2001/94360

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abstract = "We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.",

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AU - Goodnick, Stephen

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AB - We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.

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Hybrid particle-based full-band analysis of ultra-small MOS

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Keywords

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