Hybrid CA/Monte Carlo modeling of charge transport in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled with a 2D and 3D multi-grid Poisson solver.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages457-460
Number of pages4
StatePublished - Dec 1 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
CountryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Keywords

  • 3D Poisson Solver
  • Cellular Automata
  • Device simulation
  • Full-Band
  • Monte Carlo
  • Multi-grid Method

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Saraniti, M., Goodnick, S., & Wigger, S. J. (2000). Hybrid CA/Monte Carlo modeling of charge transport in semiconductors. In M. Laudon, & B. Romanowicz (Eds.), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 (pp. 457-460). (2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000).