Hybrid AlN-SiC deep ultraviolet Schottky barrier photodetectors

R. Dahal, T. M. Al Tahtamouni, Z. Y. Fan, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Deep ultraviolet (DUV) Schottky barrier photodetectors have been demonstrated by exploiting the epitaxial growth of high quality AlN epilayer on n -type SiC substrate. The fabricated AlNn-SiC hybrid Schottky barrier detectors exhibited a peak responsivity at 200 nm with very sharp cutoff wavelength at 210 nm, very high reverse breakdown voltages (>200 V), very low dark currents (about 10 fA at a reverse bias of 50 V), and high responsivity and DUV to UV/visible rejection ratio. These outstanding features are direct attributes of the fundamental material properties and high quality of AlN epilayers. The fabricated photodetectors also have a thermal energy limited detectivity at zero bias of about 1.0× 1015 cm Hz12 W-1. These results demonstrated that AlN epilayers are an excellent candidate as an active material for DUV optoelectronic device applications.

Original languageEnglish (US)
Article number263505
JournalApplied Physics Letters
Volume90
Issue number26
DOIs
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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