Abstract
The microstructure of Al/n-type GaN contact interfaces and the effects of heat treatment have been investigated. The n type GaN films (Ge doped) and AlN buffer were grown on 6H-SiC substrates by means of gas-source MBE using an ECR plasma source. The microstructure of the layers and the interfaces between layers in both as-deposited and rapid thermal annealed samples were studied by HREM and EELS. The observed results were used to analyze the growth mode of the layers and the effect of the Ge doping on the growth. On the Al/GaN interface a new phase is observed in the annealed sample. The possible structure of the new phase and its effect on electric properties is discussed.
| Original language | English (US) |
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| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 433-439 |
| Number of pages | 7 |
| Volume | 355 |
| State | Published - 1995 |
| Event | Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Dec 2 1994 |
Other
| Other | Proceedings of the 1994 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 11/28/94 → 12/2/94 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials