HREM study of the microstructure of Al contact on GaN/AlN/SiC thin films

Y. Huang, L. Smith, M. J. Kim, Ray Carpenter, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The microstructure of Al/n-type GaN contact interfaces and the effects of heat treatment have been investigated. The n type GaN films (Ge doped) and AlN buffer were grown on 6H-SiC substrates by means of gas-source MBE using an ECR plasma source. The microstructure of the layers and the interfaces between layers in both as-deposited and rapid thermal annealed samples were studied by HREM and EELS. The observed results were used to analyze the growth mode of the layers and the effect of the Ge doping on the growth. On the Al/GaN interface a new phase is observed in the annealed sample. The possible structure of the new phase and its effect on electric properties is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages433-439
Number of pages7
Volume355
StatePublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994

Other

OtherProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA
Period11/28/9412/2/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Huang, Y., Smith, L., Kim, M. J., Carpenter, R., & Davis, R. F. (1995). HREM study of the microstructure of Al contact on GaN/AlN/SiC thin films. In Materials Research Society Symposium - Proceedings (Vol. 355, pp. 433-439). Materials Research Society.