Abstract
High resolution electron microscopy and computer simulation were used to study the interface triad, Ti5Si3/TiC/6H-SiC. The TiC thickness, interlayer dimension normal to the interfaces and the size of the required supercell were analyzed. First, a block of 6H-SiC crystal and a block of TiC crystal were synthesized. An intermediate supercell was then built by combining the two crystals. Orientation relationship was determined from experimental data. Finally, HREM images were simulated from the supercell.
Original language | English (US) |
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Title of host publication | Proceedings - Annual Meeting, Microscopy Society of America |
Editors | G.W. Bailey, A.J. Garratt-Reed |
Pages | 518-519 |
Number of pages | 2 |
State | Published - 1994 |
Event | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994 |
Other
Other | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America |
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City | New Orleans, LA, USA |
Period | 7/31/94 → 8/5/94 |
ASJC Scopus subject areas
- Engineering(all)