HREM image simulation of Ti5Si3/TiC/6H-SiC interfaces

J. S. Bow, Ray Carpenter, M. J. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High resolution electron microscopy and computer simulation were used to study the interface triad, Ti5Si3/TiC/6H-SiC. The TiC thickness, interlayer dimension normal to the interfaces and the size of the required supercell were analyzed. First, a block of 6H-SiC crystal and a block of TiC crystal were synthesized. An intermediate supercell was then built by combining the two crystals. Orientation relationship was determined from experimental data. Finally, HREM images were simulated from the supercell.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
EditorsG.W. Bailey, A.J. Garratt-Reed
Pages518-519
Number of pages2
StatePublished - 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

ASJC Scopus subject areas

  • Engineering(all)

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    Bow, J. S., Carpenter, R., & Kim, M. J. (1994). HREM image simulation of Ti5Si3/TiC/6H-SiC interfaces. In G. W. Bailey, & A. J. Garratt-Reed (Eds.), Proceedings - Annual Meeting, Microscopy Society of America (pp. 518-519)