HREM and AEM study of Pt/SiC interface annealed at high temperature

J. S. Bow, L. M. Porter, M. J. Kim, Ray Carpenter, R. F. Davis

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. In this study, the microstructure of the Pt/SiC interface is characterized after high temperature annealing in UHV at near atomic resolution and the first nanospectroscopic energy loss data for the system is reported.

    Original languageEnglish (US)
    Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
    PublisherPubl by San Francisco Press Inc
    Pages832-833
    Number of pages2
    StatePublished - 1993
    EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
    Duration: Aug 1 1993Aug 6 1993

    Other

    OtherProceedings of the 51st Annual Meeting Microscopy Society of America
    CityCincinnati, OH, USA
    Period8/1/938/6/93

    ASJC Scopus subject areas

    • General Engineering

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