HREM and AEM study of Pt/SiC interface annealed at high temperature

J. S. Bow, L. M. Porter, M. J. Kim, Ray Carpenter, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. In this study, the microstructure of the Pt/SiC interface is characterized after high temperature annealing in UHV at near atomic resolution and the first nanospectroscopic energy loss data for the system is reported.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
PublisherPubl by San Francisco Press Inc
Pages832-833
Number of pages2
StatePublished - 1993
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: Aug 1 1993Aug 6 1993

Other

OtherProceedings of the 51st Annual Meeting Microscopy Society of America
CityCincinnati, OH, USA
Period8/1/938/6/93

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'HREM and AEM study of Pt/SiC interface annealed at high temperature'. Together they form a unique fingerprint.

  • Cite this

    Bow, J. S., Porter, L. M., Kim, M. J., Carpenter, R., & Davis, R. F. (1993). HREM and AEM study of Pt/SiC interface annealed at high temperature. In Proceedings - Annual Meeting, Microscopy Society of America (pp. 832-833). Publ by San Francisco Press Inc.