HREM and AEM study of Pt/SiC interface annealed at high temperature

J. S. Bow; L. M. Porter; M. J. Kim; Ray Carpenter; R. F. Davis

HREM and AEM study of Pt/SiC interface annealed at high temperature

J. S. Bow, L. M. Porter, M. J. Kim, Ray Carpenter, R. F. Davis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. In this study, the microstructure of the Pt/SiC interface is characterized after high temperature annealing in UHV at near atomic resolution and the first nanospectroscopic energy loss data for the system is reported.

Original language	English (US)
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Publisher	Publ by San Francisco Press Inc
Pages	832-833
Number of pages	2
State	Published - 1993
Event	Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: Aug 1 1993 → Aug 6 1993

Other

Other	Proceedings of the 51st Annual Meeting Microscopy Society of America
City	Cincinnati, OH, USA
Period	8/1/93 → 8/6/93

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{b06532f284db4336b9cb580d5b383ae7,

title = "HREM and AEM study of Pt/SiC interface annealed at high temperature",

abstract = "Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. In this study, the microstructure of the Pt/SiC interface is characterized after high temperature annealing in UHV at near atomic resolution and the first nanospectroscopic energy loss data for the system is reported.",

author = "Bow, {J. S.} and Porter, {L. M.} and Kim, {M. J.} and Ray Carpenter and Davis, {R. F.}",

year = "1993",

language = "English (US)",

pages = "832--833",

booktitle = "Proceedings - Annual Meeting, Microscopy Society of America",

publisher = "Publ by San Francisco Press Inc",

note = "Proceedings of the 51st Annual Meeting Microscopy Society of America ; Conference date: 01-08-1993 Through 06-08-1993",

}

TY - GEN

T1 - HREM and AEM study of Pt/SiC interface annealed at high temperature

AU - Bow, J. S.

AU - Porter, L. M.

AU - Kim, M. J.

AU - Carpenter, Ray

AU - Davis, R. F.

PY - 1993

Y1 - 1993

N2 - Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. In this study, the microstructure of the Pt/SiC interface is characterized after high temperature annealing in UHV at near atomic resolution and the first nanospectroscopic energy loss data for the system is reported.

AB - Pt/SiC was reported to have more stable and better electrical properties than other metal/6H-SiC after annealing above 700°C under UHV condition. In this study, the microstructure of the Pt/SiC interface is characterized after high temperature annealing in UHV at near atomic resolution and the first nanospectroscopic energy loss data for the system is reported.

UR - http://www.scopus.com/inward/record.url?scp=0027704885&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027704885&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027704885

SP - 832

EP - 833

BT - Proceedings - Annual Meeting, Microscopy Society of America

PB - Publ by San Francisco Press Inc

T2 - Proceedings of the 51st Annual Meeting Microscopy Society of America

Y2 - 1 August 1993 through 6 August 1993

ER -

HREM and AEM study of Pt/SiC interface annealed at high temperature

Abstract

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ASJC Scopus subject areas

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