How quantum effects and unintentional doping affect the threshold voltage of narrow-width SOI devices

Dragica Vasileska, Shaikh S. Ahmed

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 50 nm gate length narrow-width SOI device structure has been studied using an in-house 3D Ensemble Monte Carlo particle-based device simulator. We find a threshold voltage increase with decreasing channel width due to lateral quantum-mechanical size-quantization effect. We also find that the presence of even a single impurity in the channel region of the device (unintentional doping) gives rise to significant threshold voltage fluctuations based upon its location. In summary, quantum effects and short-range Coulomb interactions must be properly accounted for when investigating nanoscale devices.

Original languageEnglish (US)
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages340-342
Number of pages3
StatePublished - Dec 1 2004
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: Aug 16 2004Aug 19 2004

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period8/16/048/19/04

Keywords

  • Discrete impurity effects
  • Monte Carlo device simulations
  • Quantum confinement
  • SOI devices
  • Short-range interactions

ASJC Scopus subject areas

  • Engineering(all)

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