@inproceedings{b915cc4da662469bbb0d9a94d12d22f1,
title = "How quantum effects and unintentional doping affect the threshold voltage of narrow-width SOI devices",
abstract = "A 50 nm gate length narrow-width SOI device structure has been studied using an in-house 3D Ensemble Monte Carlo particle-based device simulator. We find a threshold voltage increase with decreasing channel width due to lateral quantum-mechanical size-quantization effect. We also find that the presence of even a single impurity in the channel region of the device (unintentional doping) gives rise to significant threshold voltage fluctuations based upon its location. In summary, quantum effects and short-range Coulomb interactions must be properly accounted for when investigating nanoscale devices.",
keywords = "Discrete impurity effects, Monte Carlo device simulations, Quantum confinement, SOI devices, Short-range interactions",
author = "Dragica Vasileska and Ahmed, {Shaikh S.}",
year = "2004",
month = dec,
day = "1",
language = "English (US)",
isbn = "0780385365",
series = "2004 4th IEEE Conference on Nanotechnology",
pages = "340--342",
booktitle = "2004 4th IEEE Conference on Nanotechnology",
note = "2004 4th IEEE Conference on Nanotechnology ; Conference date: 16-08-2004 Through 19-08-2004",
}