Abstract

Pd2Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The SiPd2Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the SiPd2 interface. Electrical measurements of the ideality factor for Schottky barriers made from these materials produced higher values for the rougher evaporation-formed interfaces consistent with interface-roughness-induced scattering and carrier recombination.

Original languageEnglish (US)
Pages (from-to)17-29
Number of pages13
JournalThin Solid Films
Volume104
Issue number1-2
DOIs
StatePublished - Jun 17 1983

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Palladium
Evaporation
Silicon
X rays
Sputtering
Energy dissipation
palladium
evaporation
High resolution electron microscopy
Microanalysis
energy dissipation
sputtering
Surface roughness
Fluorescence
x rays
Spectroscopy
Scattering
Oxygen
silicon
microanalysis

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

How epitaxial are Pd2SiSi interfaces? / Liliental, Z.; Carpenter, Ray; Tuenge, R.

In: Thin Solid Films, Vol. 104, No. 1-2, 17.06.1983, p. 17-29.

Research output: Contribution to journalArticle

Liliental, Z. ; Carpenter, Ray ; Tuenge, R. / How epitaxial are Pd2SiSi interfaces?. In: Thin Solid Films. 1983 ; Vol. 104, No. 1-2. pp. 17-29.
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