TY - GEN
T1 - Hot hole transport in a-Si/c-Si heterojunction solar cells
AU - Muralidharan, Pradyumna
AU - Ghosh, Kunal
AU - Vasileska, Dragica
AU - Goodnick, Stephen
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.
AB - The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.
KW - Amorphous Semiconductors
KW - Heterojunctions
KW - Numerical Simulation
KW - Silicon Devices
KW - Solar Energy
UR - http://www.scopus.com/inward/record.url?scp=84912074416&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912074416&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925443
DO - 10.1109/PVSC.2014.6925443
M3 - Conference contribution
AN - SCOPUS:84912074416
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 2519
EP - 2523
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -