Abstract

The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2519-2523
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Heterojunctions
Solar cells
Defects
Valence bands
Distribution functions
Monte Carlo simulation

Keywords

  • Amorphous Semiconductors
  • Heterojunctions
  • Numerical Simulation
  • Silicon Devices
  • Solar Energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Muralidharan, P., Ghosh, K., Vasileska, D., & Goodnick, S. (2014). Hot hole transport in a-Si/c-Si heterojunction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2519-2523). [6925443] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925443

Hot hole transport in a-Si/c-Si heterojunction solar cells. / Muralidharan, Pradyumna; Ghosh, Kunal; Vasileska, Dragica; Goodnick, Stephen.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2519-2523 6925443.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Muralidharan, P, Ghosh, K, Vasileska, D & Goodnick, S 2014, Hot hole transport in a-Si/c-Si heterojunction solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925443, Institute of Electrical and Electronics Engineers Inc., pp. 2519-2523, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925443
Muralidharan P, Ghosh K, Vasileska D, Goodnick S. Hot hole transport in a-Si/c-Si heterojunction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2519-2523. 6925443 https://doi.org/10.1109/PVSC.2014.6925443
Muralidharan, Pradyumna ; Ghosh, Kunal ; Vasileska, Dragica ; Goodnick, Stephen. / Hot hole transport in a-Si/c-Si heterojunction solar cells. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2519-2523
@inproceedings{5c60c573dec8477eb3f6d034120f93c6,
title = "Hot hole transport in a-Si/c-Si heterojunction solar cells",
abstract = "The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.",
keywords = "Amorphous Semiconductors, Heterojunctions, Numerical Simulation, Silicon Devices, Solar Energy",
author = "Pradyumna Muralidharan and Kunal Ghosh and Dragica Vasileska and Stephen Goodnick",
year = "2014",
month = "10",
day = "15",
doi = "10.1109/PVSC.2014.6925443",
language = "English (US)",
isbn = "9781479943982",
pages = "2519--2523",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Hot hole transport in a-Si/c-Si heterojunction solar cells

AU - Muralidharan, Pradyumna

AU - Ghosh, Kunal

AU - Vasileska, Dragica

AU - Goodnick, Stephen

PY - 2014/10/15

Y1 - 2014/10/15

N2 - The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.

AB - The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) of the carriers impinging on the hetero-interface. The high field region at the interface results in a strongly non-Maxwellian distribution of holes incident on the surface, which has implications for current collection and a significant impact on the overall efficiency of the device. This work studies the effect of the high field transport on photogenerated carriers at the hetero-interface through a combination of Monte Carlo simulations and analysis of defect assisted transport. A three band warped non-parabolic band model is implemented to describe the valence band in order to accurately represent high energy photocarriers. Also, percolation path theory is applied to study defect assisted transport in the intrinsic amorphous region by considering mechanisms such as defect capture through tunneling, emission through Poole - Frenkel effect, and emission through tunneling.

KW - Amorphous Semiconductors

KW - Heterojunctions

KW - Numerical Simulation

KW - Silicon Devices

KW - Solar Energy

UR - http://www.scopus.com/inward/record.url?scp=84912074416&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912074416&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925443

DO - 10.1109/PVSC.2014.6925443

M3 - Conference contribution

AN - SCOPUS:84912074416

SN - 9781479943982

SP - 2519

EP - 2523

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -