Hot electron microwave conductivity of wide bandgap semiconductors

P. Das, D. K. Ferry

Research output: Contribution to journalArticle

148 Citations (Scopus)

Abstract

Hot electron microwave conductivity of the wide bandgap semiconductors GaN, SiC and Diamond has been calculated using displaced Maxwellian approximation for the electron distribution function. The effects of both the energy and momentum relaxation times due to scattering by acoustical, optical intervalley phonons and by ionized impurities are included in the derivations. Numerical results for the microwave conductivity and the change in dielectric constant as a function of frequency and bias electric field are presented. It is found that significant change in the conductivity and dielectric constant contribution for a fixed bias field occurs at very high frequencies on the order of 1012 Hz, which is well beyond the range of current microwave device interest.

Original languageEnglish (US)
Pages (from-to)851-855
Number of pages5
JournalSolid State Electronics
Volume19
Issue number10
DOIs
StatePublished - 1976
Externally publishedYes

Fingerprint

Hot electrons
hot electrons
Energy gap
Permittivity
Microwaves
Semiconductor materials
microwaves
conductivity
Microwave devices
Diamond
Phonons
Relaxation time
permittivity
Distribution functions
Diamonds
Momentum
very high frequencies
Electric fields
Scattering
Impurities

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hot electron microwave conductivity of wide bandgap semiconductors. / Das, P.; Ferry, D. K.

In: Solid State Electronics, Vol. 19, No. 10, 1976, p. 851-855.

Research output: Contribution to journalArticle

Das, P. ; Ferry, D. K. / Hot electron microwave conductivity of wide bandgap semiconductors. In: Solid State Electronics. 1976 ; Vol. 19, No. 10. pp. 851-855.
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