Hot carrier scaling of localization in a quantum dot array

L. H. Lin; N. Aoki; K. Nakao; A. Andresen; C. Prasad; F. Ge; J. P. Bird; D. K. Ferry; Y. Ochiai; K. Ishibashi; Y. Aoyagi; T. Sugano

doi:10.1016/S0921-4526(99)00345-2

Hot carrier scaling of localization in a quantum dot array

L. H. Lin, N. Aoki, K. Nakao, A. Andresen, C. Prasad, F. Ge, J. P. Bird, D. K. Ferry, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The nonlinear conductivity of an array of quantum dots, formed by split-gates on a GaAs/AlGaAs heterostructure, is studied. Previously, this array was shown to exhibit a gate bias-induced localization behavior at low temperatures, similar to the insulating state found in 2D systems. Here, we study the effect of source-drain bias potential on the heating of the electron system in the dots. We find that the scaling of conductance with this bias voltage can be described by an equation similar to that for temperature. In addition, we determine the effective temperature and energy-relaxation time. This relaxation time appears to decay as T^-3/2 at higher temperatures, but shows a saturation at low temperatures.

Original language	English (US)
Pages (from-to)	49-52
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00345-2
State	Published - Dec 1 1999
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00345-2

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title = "Hot carrier scaling of localization in a quantum dot array",

abstract = "The nonlinear conductivity of an array of quantum dots, formed by split-gates on a GaAs/AlGaAs heterostructure, is studied. Previously, this array was shown to exhibit a gate bias-induced localization behavior at low temperatures, similar to the insulating state found in 2D systems. Here, we study the effect of source-drain bias potential on the heating of the electron system in the dots. We find that the scaling of conductance with this bias voltage can be described by an equation similar to that for temperature. In addition, we determine the effective temperature and energy-relaxation time. This relaxation time appears to decay as T-3/2 at higher temperatures, but shows a saturation at low temperatures.",

author = "Lin, {L. H.} and N. Aoki and K. Nakao and A. Andresen and C. Prasad and F. Ge and Bird, {J. P.} and Ferry, {D. K.} and Y. Ochiai and K. Ishibashi and Y. Aoyagi and T. Sugano",

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doi = "10.1016/S0921-4526(99)00345-2",

language = "English (US)",

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pages = "49--52",

journal = "Physica B: Condensed Matter",

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publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

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TY - JOUR

T1 - Hot carrier scaling of localization in a quantum dot array

AU - Lin, L. H.

AU - Aoki, N.

AU - Nakao, K.

AU - Andresen, A.

AU - Prasad, C.

AU - Ge, F.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Ochiai, Y.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Sugano, T.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The nonlinear conductivity of an array of quantum dots, formed by split-gates on a GaAs/AlGaAs heterostructure, is studied. Previously, this array was shown to exhibit a gate bias-induced localization behavior at low temperatures, similar to the insulating state found in 2D systems. Here, we study the effect of source-drain bias potential on the heating of the electron system in the dots. We find that the scaling of conductance with this bias voltage can be described by an equation similar to that for temperature. In addition, we determine the effective temperature and energy-relaxation time. This relaxation time appears to decay as T-3/2 at higher temperatures, but shows a saturation at low temperatures.

AB - The nonlinear conductivity of an array of quantum dots, formed by split-gates on a GaAs/AlGaAs heterostructure, is studied. Previously, this array was shown to exhibit a gate bias-induced localization behavior at low temperatures, similar to the insulating state found in 2D systems. Here, we study the effect of source-drain bias potential on the heating of the electron system in the dots. We find that the scaling of conductance with this bias voltage can be described by an equation similar to that for temperature. In addition, we determine the effective temperature and energy-relaxation time. This relaxation time appears to decay as T-3/2 at higher temperatures, but shows a saturation at low temperatures.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033310743&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00345-2

DO - 10.1016/S0921-4526(99)00345-2

M3 - Conference article

AN - SCOPUS:0033310743

SN - 0921-4526

VL - 272

SP - 49

EP - 52

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Hot carrier scaling of localization in a quantum dot array

Abstract

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