Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETs and in AlGaAs/GaAs HEMTs at high drain voltages. The dominant mechanism for the emission of photons with hv>E g is the recombination between impact ionization generated holes and channel electrons.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry