Hot-carrier-induced photon emission in submicron GaAs devices

E. Zanoni, C. Tedesco, M. Manfredi, M. Saraniti, P. Lugli

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETs and in AlGaAs/GaAs HEMTs at high drain voltages. The dominant mechanism for the emission of photons with hv>E g is the recombination between impact ionization generated holes and channel electrons.

Original languageEnglish (US)
Article number142
Pages (from-to)B543-B545
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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