Abstract
An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/Sb2Te3-Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.
Original language | English (US) |
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Pages (from-to) | 2755-2761 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 17 |
DOIs | |
State | Published - May 7 2014 |
Externally published | Yes |
Keywords
- atomic layer deposition (ALD)
- hetero-structure
- hot carrier filtering effect
- molecular metal chalcogenide
- solution processed
- thermoelectric
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering