Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

F. A. Ponce, D. P. Bour, W. Götz, N. M. Johnson, H. I. Helava, I. Grzegory, J. Jun, S. Porowski

Research output: Contribution to journalArticle

98 Scopus citations

Abstract

Bulk single crystals of GaN were used for epitaxial growth of GaN by metalorganic chemical vapor deposition. Photoluminescence (at 2 K) from polished substrates yields a broad near-band-edge emission band centered at 3.32 eV and the commonly observed yellow luminescence band. In contrast, the epitaxial layer displays a strong, sharp bound exciton line at 3.458 eV and a weak yellow band. Transmission electron microscopy reveals a sharp, planar interface between substrate and epilayer: The substrate contains small Ga inclusions, and the epilayer consists of less than 108 dislocations per cm2, mostly in the form of dislocation loops, which originate at the interface.

Original languageEnglish (US)
Pages (from-to)917-919
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number7
DOIs
StatePublished - Dec 1 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ponce, F. A., Bour, D. P., Götz, W., Johnson, N. M., Helava, H. I., Grzegory, I., Jun, J., & Porowski, S. (1996). Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Applied Physics Letters, 68(7), 917-919. https://doi.org/10.1063/1.116230