Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 82%
• High electron mobility transistors 61%
• Growth temperature 57%
• Plasmas 49%
• Heterojunctions 46%
• Transmission electron microscopy 36%
• Hall mobility 35%
• Vapor phase epitaxy 31%
• Spectroscopic analysis 28%
• Surface cleaning 27%
• Gallium 25%
• Substrates 25%
• Drain current 22%
• Hydrides 22%
• Desorption 20%
• Electric breakdown 20%
• Structural properties 19%
• Electric properties 18%
• Current density 17%
• Impurities 17%
• Ions 16%
• Oxygen 14%

Chemical Compounds

• Threading Dislocation 100%
• Molecular Beam Epitaxy 76%
• Vapor Phase Epitaxy 28%
• Drain Current 27%
• Breakdown Voltage 26%
• Transmission Electron Microscopy 23%
• Buffer Solution 23%
• Secondary Ion 22%
• Electron Mobility 21%
• Spectroscopic Analysis 17%
• Hydride 15%
• Electrical Property 14%
• Desorption 13%
• Compound Mobility 13%
• Current Density 13%
• Dioxygen 8%
• Surface 5%

Physics & Astronomy

• high electron mobility transistors 54%
• molecular beam epitaxy 45%
• buffers 17%
• transmission electron microscopy 13%
• spectroscopic analysis 13%
• vapor phase epitaxy 11%
• gallium 10%
• hydrides 10%
• cleaning 10%
• electrical faults 10%
• desorption 9%
• examination 8%
• leakage 8%
• electrical properties 7%
• current density 7%
• impurities 7%
• oxygen 6%
• temperature 6%
• ions 4%