Homoepitaxial growth of GaN using molecular beam epitaxy

A. Gassmann, T. Suski, N. Newman, C. Kisielowski, E. Jones, E. R. Weber, Z. Liliental-Weber, M. D. Rubin, H. I. Helava, I. Grzagory, M. Bockowski, J. Jun, S. Porowski

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31 Scopus citations

Abstract

In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to hetroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films.

Original languageEnglish (US)
Pages (from-to)2195-2198
Number of pages4
JournalJournal of Applied Physics
Volume80
Issue number4
DOIs
StatePublished - Aug 15 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Gassmann, A., Suski, T., Newman, N., Kisielowski, C., Jones, E., Weber, E. R., Liliental-Weber, Z., Rubin, M. D., Helava, H. I., Grzagory, I., Bockowski, M., Jun, J., & Porowski, S. (1996). Homoepitaxial growth of GaN using molecular beam epitaxy. Journal of Applied Physics, 80(4), 2195-2198. https://doi.org/10.1063/1.363112