Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electron microscopy

A. Pavlovska, V. M. Torres, J. L. Edwards, E. Bauer, David Smith, R. B. Doak, I. S T Tsong, D. B. Thomson, R. F. Davis

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The homoepitaxial growth of GaN(0001) layers was studied in situ and in real time using the low-energy electron microscope, and ex situ using atomic force microscopy and transmission electron microscopy. The growth was conduced on substrates of GAN(0001) deposited on 6H-SiC(0001) by organometallic vapor phase epitaxy. Two growth techniques were employed: one with N atoms supplied by an r.f. plasma source, and the other with NH3 molecules seeded in a He supersonic beam. The Ga flux was supplied by an evaporative cell in both cases. Under Ga-rich conditions, non-faceted homoepitaxial layers were achieved on Ga precovered substrate surfaces for both growth methods at 665 °C, but the growth morphologies were different.

Original languageEnglish (US)
Pages (from-to)469-473
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
StatePublished - Nov 1 1999
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: Jul 4 1999Jul 9 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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