Hollow core dislocations in Mg-doped AlGaN

D. Cherns, Y. Q. Wang, R. Liu, Fernando Ponce, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10 20 cm -3) Al 0.03Ga 0.97N films grown on (0001) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages609-614
Number of pages6
Volume743
StatePublished - 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

Other

OtherGan and Related Alloys - 2002
CountryUnited States
CityBoston, MA
Period12/2/0212/6/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Cherns, D., Wang, Y. Q., Liu, R., Ponce, F., Amano, H., & Akasaki, I. (2002). Hollow core dislocations in Mg-doped AlGaN. In C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, & Y. Arakawa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 743, pp. 609-614)