Abstract
Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10 20 cm -3) Al 0.03Ga 0.97N films grown on (0001) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa |
Pages | 609-614 |
Number of pages | 6 |
Volume | 743 |
State | Published - 2002 |
Event | Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002 |
Other
Other | Gan and Related Alloys - 2002 |
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Country/Territory | United States |
City | Boston, MA |
Period | 12/2/02 → 12/6/02 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials