Hole transport simulations in p-channel Si MOSFETs

S. Krishnan, Dragica Vasileska, M. V. Fischetti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hole transport is investigated in ultrasmall p-channel Si MOSFETs with gate lengths of 25 nm using the Full band Monte Carlo technique. The device simulator couples a 2D Poisson solver with a discretized 6×6 k.p Hamiltonian solver that handles the valence band-structure and includes the effect of the confining potential under the gate, thereby providing the subband structure in the channel region. Carriers in the source and drain regions are treated as quasi-3D particles and the band-structure information is included by solving for the eigenenergies of a more compact 6×6 k.p Hamiltonian. It is seen that band-structure calculations are needed in order to describe accurately the high field transport in ultrasmall nano-scale MOSFETs.

Original languageEnglish (US)
Title of host publication2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
EditorsM. Laudon, B. Romanowicz
Pages72-75
Number of pages4
StatePublished - Dec 1 2005
Event2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
Duration: May 8 2005May 12 2005

Publication series

Name2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Other

Other2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
CountryUnited States
CityAnaheim, CA
Period5/8/055/12/05

Keywords

  • 2d monte carlo
  • Hole transport
  • Six band k.p
  • Valence band-structure

ASJC Scopus subject areas

  • Engineering(all)

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