@inproceedings{09077e11bb3f42618b7441b52bf72024,
title = "Hole transport simulations in p-channel Si MOSFETs",
abstract = "Hole transport is investigated in ultrasmall p-channel Si MOSFETs with gate lengths of 25 nm using the Full band Monte Carlo technique. The device simulator couples a 2D Poisson solver with a discretized 6×6 k.p Hamiltonian solver that handles the valence band-structure and includes the effect of the confining potential under the gate, thereby providing the subband structure in the channel region. Carriers in the source and drain regions are treated as quasi-3D particles and the band-structure information is included by solving for the eigenenergies of a more compact 6×6 k.p Hamiltonian. It is seen that band-structure calculations are needed in order to describe accurately the high field transport in ultrasmall nano-scale MOSFETs.",
keywords = "2d monte carlo, Hole transport, Six band k.p, Valence band-structure",
author = "S. Krishnan and Dragica Vasileska and Fischetti, {M. V.}",
year = "2005",
language = "English (US)",
isbn = "0976798522",
series = "2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings",
pages = "72--75",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings",
note = "2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 ; Conference date: 08-05-2005 Through 12-05-2005",
}