Hole transport in p-channel Si MOSFETs

Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using a Monte Carlo method, we investigate hole transport in ultrasmall p-channel Si MOSFETs with gate lengths of 25 nm. The device simulator couples a 2D Poisson solver with a discretized 6×6 k·p Hamiltonian solver that handles the valence band-structure and includes the effect of the confining potential under the gate, thereby providing the subband structure in the channel region. Carriers in the source and drain regions are treated as quasi-3D particles and the band-structure information is included by solving for the eigenenergies of a more compact 6×6 k·p Hamiltonian. It is seen that band-structure calculations are needed in order to describe accurately the high field transport in ultrasmall nano-scale MOSFETs.

Original languageEnglish (US)
Pages (from-to)323-326
Number of pages4
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
StatePublished - Mar 2005

Fingerprint

Band structure
Hamiltonians
field effect transistors
elementary excitations
Valence bands
confining
simulators
Monte Carlo method
Monte Carlo methods
Simulators
valence

Keywords

  • 2D Monte Carlo
  • Hole transport
  • Six band k·p
  • Valence band-structure

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Hole transport in p-channel Si MOSFETs. / Krishnan, Santhosh; Vasileska, Dragica; Fischetti, Massimo V.

In: Microelectronics Journal, Vol. 36, No. 3-6, 03.2005, p. 323-326.

Research output: Contribution to journalArticle

Krishnan, Santhosh ; Vasileska, Dragica ; Fischetti, Massimo V. / Hole transport in p-channel Si MOSFETs. In: Microelectronics Journal. 2005 ; Vol. 36, No. 3-6. pp. 323-326.
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