Hole initiated impact ionization in wide band gap semiconductors

Martin Reigrotzki, Ronald Redmer, Niels Fitzer, Stephen Goodnick, Manfred Dür, Wolfgang Schattke

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Band-to-band impact ionization by hot electrons and holes is an important process in high-field transport in semiconductors, leading to carrier multiplication and avalanche breakdown. Here we perform first principles calculations for the respective microscopic scattering rates of both electrons and holes in various wide band gap semiconductors. The impact ionization rates themselves are calculated directly from the electronic band structure derived from empirical pseudopotential calculations for cubic GaN, ZnS, and SrS. In comparison with the electron rates, a cutoff in the hole rate is found due to the relatively narrow valence bandwidths in these wide band gap semiconductors, which correspondingly reduces hole initiated carrier multiplication.

Original languageEnglish (US)
Pages (from-to)4458-4463
Number of pages6
JournalJournal of Applied Physics
Volume86
Issue number8
StatePublished - Oct 15 1999

Fingerprint

broadband
ionization
multiplication
hot electrons
avalanches
pseudopotentials
electrons
cut-off
breakdown
bandwidth
valence
scattering
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Reigrotzki, M., Redmer, R., Fitzer, N., Goodnick, S., Dür, M., & Schattke, W. (1999). Hole initiated impact ionization in wide band gap semiconductors. Journal of Applied Physics, 86(8), 4458-4463.

Hole initiated impact ionization in wide band gap semiconductors. / Reigrotzki, Martin; Redmer, Ronald; Fitzer, Niels; Goodnick, Stephen; Dür, Manfred; Schattke, Wolfgang.

In: Journal of Applied Physics, Vol. 86, No. 8, 15.10.1999, p. 4458-4463.

Research output: Contribution to journalArticle

Reigrotzki, M, Redmer, R, Fitzer, N, Goodnick, S, Dür, M & Schattke, W 1999, 'Hole initiated impact ionization in wide band gap semiconductors', Journal of Applied Physics, vol. 86, no. 8, pp. 4458-4463.
Reigrotzki M, Redmer R, Fitzer N, Goodnick S, Dür M, Schattke W. Hole initiated impact ionization in wide band gap semiconductors. Journal of Applied Physics. 1999 Oct 15;86(8):4458-4463.
Reigrotzki, Martin ; Redmer, Ronald ; Fitzer, Niels ; Goodnick, Stephen ; Dür, Manfred ; Schattke, Wolfgang. / Hole initiated impact ionization in wide band gap semiconductors. In: Journal of Applied Physics. 1999 ; Vol. 86, No. 8. pp. 4458-4463.
@article{a97c8422f354493bb375dc4cf5c9b70f,
title = "Hole initiated impact ionization in wide band gap semiconductors",
abstract = "Band-to-band impact ionization by hot electrons and holes is an important process in high-field transport in semiconductors, leading to carrier multiplication and avalanche breakdown. Here we perform first principles calculations for the respective microscopic scattering rates of both electrons and holes in various wide band gap semiconductors. The impact ionization rates themselves are calculated directly from the electronic band structure derived from empirical pseudopotential calculations for cubic GaN, ZnS, and SrS. In comparison with the electron rates, a cutoff in the hole rate is found due to the relatively narrow valence bandwidths in these wide band gap semiconductors, which correspondingly reduces hole initiated carrier multiplication.",
author = "Martin Reigrotzki and Ronald Redmer and Niels Fitzer and Stephen Goodnick and Manfred D{\"u}r and Wolfgang Schattke",
year = "1999",
month = "10",
day = "15",
language = "English (US)",
volume = "86",
pages = "4458--4463",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Hole initiated impact ionization in wide band gap semiconductors

AU - Reigrotzki, Martin

AU - Redmer, Ronald

AU - Fitzer, Niels

AU - Goodnick, Stephen

AU - Dür, Manfred

AU - Schattke, Wolfgang

PY - 1999/10/15

Y1 - 1999/10/15

N2 - Band-to-band impact ionization by hot electrons and holes is an important process in high-field transport in semiconductors, leading to carrier multiplication and avalanche breakdown. Here we perform first principles calculations for the respective microscopic scattering rates of both electrons and holes in various wide band gap semiconductors. The impact ionization rates themselves are calculated directly from the electronic band structure derived from empirical pseudopotential calculations for cubic GaN, ZnS, and SrS. In comparison with the electron rates, a cutoff in the hole rate is found due to the relatively narrow valence bandwidths in these wide band gap semiconductors, which correspondingly reduces hole initiated carrier multiplication.

AB - Band-to-band impact ionization by hot electrons and holes is an important process in high-field transport in semiconductors, leading to carrier multiplication and avalanche breakdown. Here we perform first principles calculations for the respective microscopic scattering rates of both electrons and holes in various wide band gap semiconductors. The impact ionization rates themselves are calculated directly from the electronic band structure derived from empirical pseudopotential calculations for cubic GaN, ZnS, and SrS. In comparison with the electron rates, a cutoff in the hole rate is found due to the relatively narrow valence bandwidths in these wide band gap semiconductors, which correspondingly reduces hole initiated carrier multiplication.

UR - http://www.scopus.com/inward/record.url?scp=0001506543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001506543&partnerID=8YFLogxK

M3 - Article

VL - 86

SP - 4458

EP - 4463

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -