Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks

Y. Y. Fang, V. R. D'Costa, J. Tolle, J. B. Tice, C. D. Poweleit, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-temperature heteroepitaxy (330 {ring operator}C-430 {ring operator}C) of Si0.5Ge0.5 and Si0.25Ge0.75 on Si(100) using single-source silyl-germanes [ SiH3GeH3,HSi(GeH3)3] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the "source/drain" regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.

Original languageEnglish (US)
Pages (from-to)78-81
Number of pages4
JournalSolid State Communications
Volume149
Issue number1-2
DOIs
StatePublished - Jan 2009

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Epitaxial growth
epitaxy
operators
Defect density
rings
Optoelectronic devices
Surface morphology
Transistors
transistors
Temperature
augmentation
defects

Keywords

  • A. Group-IV semiconductors
  • B. Epitaxy
  • C. Strain

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks. / Fang, Y. Y.; D'Costa, V. R.; Tolle, J.; Tice, J. B.; Poweleit, C. D.; Menendez, Jose; Kouvetakis, John.

In: Solid State Communications, Vol. 149, No. 1-2, 01.2009, p. 78-81.

Research output: Contribution to journalArticle

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AU - Fang, Y. Y.

AU - D'Costa, V. R.

AU - Tolle, J.

AU - Tice, J. B.

AU - Poweleit, C. D.

AU - Menendez, Jose

AU - Kouvetakis, John

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AB - Low-temperature heteroepitaxy (330 {ring operator}C-430 {ring operator}C) of Si0.5Ge0.5 and Si0.25Ge0.75 on Si(100) using single-source silyl-germanes [ SiH3GeH3,HSi(GeH3)3] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the "source/drain" regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.

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