Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks

Y. Y. Fang; V. R. D'Costa; J. Tolle; J. B. Tice; C. D. Poweleit; Jose Menendez; John Kouvetakis

doi:10.1016/j.ssc.2008.10.009

Highly strained metastable structures and selective area epitaxy of Ge-rich Ge_1-xSi_x/Si(100) materials using nanoscale building blocks

Y. Y. Fang, V. R. D'Costa, J. Tolle, J. B. Tice, C. D. Poweleit, Jose Menendez, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Low-temperature heteroepitaxy (330 ^{{ring operator}}C-430 ^{{ring operator}}C) of Si_0.5Ge_0.5 and Si_0.25Ge_0.75 on Si(100) using single-source silyl-germanes [ SiH₃GeH₃,HSi(GeH₃)₃] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the "source/drain" regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.

Original language	English (US)
Pages (from-to)	78-81
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2008.10.009
State	Published - Jan 2009

Keywords

A. Group-IV semiconductors
B. Epitaxy
C. Strain

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2008.10.009

Cite this

@article{d917ea49560f40618e5a567923854044,

title = "Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks",

abstract = "Low-temperature heteroepitaxy (330 {ring operator}C-430 {ring operator}C) of Si0.5Ge0.5 and Si0.25Ge0.75 on Si(100) using single-source silyl-germanes [ SiH3GeH3,HSi(GeH3)3] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the {"}source/drain{"} regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.",

keywords = "A. Group-IV semiconductors, B. Epitaxy, C. Strain",

author = "Fang, {Y. Y.} and D'Costa, {V. R.} and J. Tolle and Tice, {J. B.} and Poweleit, {C. D.} and Jose Menendez and John Kouvetakis",

note = "Funding Information: This work was supported by the Air Force Office of Scientific Research under grant FA9550-60-01-0442 (MURI program), and by the NSF-STTR program. We thank Shawn Thomas (ASM America, Inc.) for the patterned wafers and Voltaix Corporation for donating the GeH 4 . ",

year = "2009",

month = jan,

doi = "10.1016/j.ssc.2008.10.009",

language = "English (US)",

volume = "149",

pages = "78--81",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "1-2",

}

TY - JOUR

T1 - Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks

AU - Fang, Y. Y.

AU - D'Costa, V. R.

AU - Tolle, J.

AU - Tice, J. B.

AU - Poweleit, C. D.

AU - Menendez, Jose

AU - Kouvetakis, John

N1 - Funding Information: This work was supported by the Air Force Office of Scientific Research under grant FA9550-60-01-0442 (MURI program), and by the NSF-STTR program. We thank Shawn Thomas (ASM America, Inc.) for the patterned wafers and Voltaix Corporation for donating the GeH 4 .

PY - 2009/1

Y1 - 2009/1

N2 - Low-temperature heteroepitaxy (330 {ring operator}C-430 {ring operator}C) of Si0.5Ge0.5 and Si0.25Ge0.75 on Si(100) using single-source silyl-germanes [ SiH3GeH3,HSi(GeH3)3] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the "source/drain" regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.

AB - Low-temperature heteroepitaxy (330 {ring operator}C-430 {ring operator}C) of Si0.5Ge0.5 and Si0.25Ge0.75 on Si(100) using single-source silyl-germanes [ SiH3GeH3,HSi(GeH3)3] produces monocrystalline structures, smooth and continuous surface morphologies and low defect densities. The metastable compressive strain in these films is dramatically enhanced relative to alternative growth methods. At such low temperatures the material grows seamlessly, conformally, and selectively in the "source/drain" regions of prototypical transistors. These results suggest that films grown via silyl-germanes could have applications in optoelectronics and as stressors for mobility enhancement in Si devices.

KW - A. Group-IV semiconductors

KW - B. Epitaxy

KW - C. Strain

UR - http://www.scopus.com/inward/record.url?scp=56349161596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56349161596&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2008.10.009

DO - 10.1016/j.ssc.2008.10.009

M3 - Article

AN - SCOPUS:56349161596

SN - 0038-1098

VL - 149

SP - 78

EP - 81

JO - Solid State Communications

JF - Solid State Communications

IS - 1-2

ER -