TY - JOUR
T1 - Highly stable two-dimensional silicon phosphides
T2 - Different stoichiometries and exotic electronic properties
AU - Huang, Bing
AU - Zhuang, Houlong L.
AU - Yoon, Mina
AU - Sumpter, Bobby G.
AU - Wei, Su Huai
N1 - Publisher Copyright:
© 2015 American Physical Society.
PY - 2015/3/3
Y1 - 2015/3/3
N2 - The discovery of stable two-dimensional, earth-abundant, semiconducting materials is of great interest and may impact future electronic technologies. By combining global structural prediction and first-principles calculations, we have theoretically discovered several semiconducting silicon phosphide (SixPy) monolayers, which could be formed stably at the stoichiometries of y/x≥1. Interestingly, some of these compounds, i.e., P-6m2Si1P1 and PmSi1P2, have comparable or even lower formation enthalpies than their known allotropes. The band gaps (Eg) of SixPy compounds can be dramatically tuned in an extremely wide range (0<Eg<3 eV) by simply changing the number of layers. Moreover, we find that carrier doping can drive the ground state of C2/mSi1P3 from a nonmagnetic state into a robust half-metallic spin-polarized state, originating from its unique valence band structure, which can extend the use of Si-related compounds for spintronics.
AB - The discovery of stable two-dimensional, earth-abundant, semiconducting materials is of great interest and may impact future electronic technologies. By combining global structural prediction and first-principles calculations, we have theoretically discovered several semiconducting silicon phosphide (SixPy) monolayers, which could be formed stably at the stoichiometries of y/x≥1. Interestingly, some of these compounds, i.e., P-6m2Si1P1 and PmSi1P2, have comparable or even lower formation enthalpies than their known allotropes. The band gaps (Eg) of SixPy compounds can be dramatically tuned in an extremely wide range (0<Eg<3 eV) by simply changing the number of layers. Moreover, we find that carrier doping can drive the ground state of C2/mSi1P3 from a nonmagnetic state into a robust half-metallic spin-polarized state, originating from its unique valence band structure, which can extend the use of Si-related compounds for spintronics.
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U2 - 10.1103/PhysRevB.91.121401
DO - 10.1103/PhysRevB.91.121401
M3 - Article
AN - SCOPUS:84924370437
SN - 1098-0121
VL - 91
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 12
M1 - 121401
ER -