Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

P. Visconti, M. A. Reshchikov, K. M. Jones, D. F. Wang, R. Cingolani, H. Morkoç̌, R. J. Molnar, David Smith

Research output: Contribution to journalConference article

30 Scopus citations

Abstract

Photoelectrochemical etching experiments were performed on n-type MBE and HVPE-grown GaN samples in order to ascertain the feasibility of this method for device fabrication and dislocation-density estimation. A moderate-illumination intensity was used to selectively etch GaN material between dislocation sites, leaving on the etched surface free-standing nanometer-scale vertical wires. The obtained results confirm the effectiveness of the PEC etching process for device fabrication and characterization of nitride materials.

Original languageEnglish (US)
Pages (from-to)1328-1333
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this